Doped layer optimization for silicon heterojunctions by injection-level-dependent open-circuit voltage measurements

IEEE Journal of Photovoltaics

Volumn 4, Issue 2, 2014, Pages 566-574

  Bivour, M ^a   Reusch, M ^a   Schroer, S ^a   Feldmann, F ^a   Temmler, J ^a   Steinkemper, H ^a   Hermle, M ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Amorphous silicon; doping; heterojunction; Schottky barrier; TCO

Indexed keywords

AMORPHOUS SILICON (A-SI:H); DEFECT RECOMBINATIONS; ILLUMINATION INTENSITY; INTERFACE PASSIVATION; SCHOTTKY BARRIERS; SILICON HETEROJUNCTIONS; TCO; TRANSPARENT CONDUCTING OXIDE;

AMORPHOUS SILICON; DOPING (ADDITIVES); HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; OPTIMIZATION; PASSIVATION; SCHOTTKY BARRIER DIODES; THIN FILMS;

SILICON;

EID: 84897669710     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2294757     Document Type: Article

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