TCO work function related transport losses at the a-Si:H/TCO-contact in SHJ solar cells

Solar Energy Materials and Solar Cells

Volumn 131, Issue , 2014, Pages 9-13

  Ritzau, Kurt Ulrich ^a   Bivour, Martin ^a   Schröer, Sebastian ^a   Steinkemper, Heiko ^a   Reinecke, Patrick ^a   Wagner, Florian ^a   Hermle, Martin ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Fermi level pinning; Fill factor; Silicon heterojunction; TCO; Tungsten oxide; Work function

Indexed keywords

FERMI LEVEL PINNING; FILL FACTOR; SILICON HETEROJUNCTIONS; TCO; TUNGSTEN OXIDE;

WORK FUNCTION;

EID: 84908399996     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.06.026     Document Type: Article

References (37)

1. ® solar cell on thin silicon wafer, in: Proceedings of the 39th IEEE Photovoltaic Specialists Conference, Tampa, Florida, USA, 2013.
2. S. De Wolf High-efficiency silicon heterojunction solar cells: a review Green 2 1 2012 7 24
3. M. Bivour, S. Schröer, and M. Hermle Numerical analysis of electrical TCO/a-Si:H(p) contact properties for silicon heterojunction solar cells Energy Procedia 38 0 2013 658 669
4. L. Zhao Role of the work function of transparent conductive oxide on the performance of amorphous/crystalline silicon heterojunction solar cells studied by computer simulation Phys. Status Solidi A 205 5 2008 1215 1221
5. E. Centurioni, and D. Iencinella Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance IEEE Electron Device Lett. 24 3 2003 177 179
6. H. Tasaki Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells J. Appl. Phys. 63 2 1988 550 560
7. A. Klein Transparent conducting oxides for photovoltaics: manipulation of Fermi level, work function and energy band alignment Materials 3 11 2010 4892 4914
8. W. Schottky Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter Z. Phys. 113 1939 367 414
9. R. Varache Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation Mater. Sci. Eng., B 178 9 2013 593 598
10. W. Böttler Window layer development for microcrystalline silicon solar cells in n-i-p configuration Physica Status Solidi C 7 3-4 2010 1069 1073
11. T. Desrues B-doped a-Si:H contact improvement on silicon heterojunction solar cells and interdigitated back contact structure Physica Status Solidi C 7 3-4 2010 1011 1015
12. T. Schulze Impact of Fermi-level dependent defect equilibration on Voc of amorphous/crystalline silicon heterojunction solar cells Energy Procedia 8 2011 282 287
13. S. De Wolf, and M. Kondo Nature of doped a-Si:H/c-Si interface recombination J. Appl. Phys. 105 2009 103707
14. Y. Tawada Properties and structure of a-SiC:H for high-efficiency a-Si solar cell J. Appl. Phys. 53 7 1982 5273 5281
15. A. Janotta Doping and its efficiency in a-SiOx:H Phys. Rev. B: Condens. Matter 69 2004 115206
16. D., Muñoz, T., Desrues, A.S., Ozanne, S., de Vecchi, S., Martín de Nicolás, F., Jay, F,Souche, N., Nguyen, C., Denis, C. Arnal, G., d'Alonzo, J., Coignus, W., Favre, T., Blevin, A., Valla, F., Ozanne, T., Salvetat, P.J., Ribeyron, Key aspects on development of high efficiency heterojunction and IBC heterojunction solar cells: towards 22% efficiency on industrial size. in: Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition, 2012.
17. J.K. Rath, and R.E.I. Schropp Incorporation of p-type microcrystalline silicon films in amorphous silicon based solar cells in a superstrate structure Sol. Energy Mater. Sol. Cells 53 1-2 1998 189 203
18. H. Fujiwara, M. Kondo, and A. Matsuda Nucleation mechanism of microcrystalline silicon from the amorphous phase J. Non-Cryst. Solids 338-340 0 2004 97 101
19. F.-J. Haug Improvement of the open circuit voltage by modifying the transparent indium-tin oxide front electrode in amorphous n-i-p solar cells Prog. Photovoltaics Res. Appl. 20 6 2012 727 734
20. M. Bivour Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells Sol. Energy Mater. Sol. Cells 106 2012 11 16
21. R. Rößler Impact of the transparent conductive oxide work function on injection-dependent a-Si:H/c-Si band bending and solar cell parameters J. Appl. Phys. 113 14 2013 144513
22. J. Meyer Highly efficient simplified organic light emitting diodes Appl. Phys. Lett. 91 11 2007 (p. -)
23. x films of different crystallinity Sol. Energy Mater. Sol. Cells 51 3-4 1998 353 370
24. T.J. Marks Progress in high work function TCO OLED anode alternatives and OLED nanopixelation Synth. Met. 127 1-3 2002 29 35
25. W., Wolke, et al. Surface passivation for solar cells by large scale inline sputtering of silicon nitride, in: Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 2005.
26. W. Graf Development of large area sputtered solar absorber coatings J. Non-Cryst. Solids 218 1997 380 387
27. S. De Wolf, and M. Kondo Boron-doped a-Si:H/c-Si interface passivation: degradation mechanism Appl. Phys. Lett. 91 112109 2007 (112109/1-3)
28. J. Bardeen Surface states and rectification at a metal semi-conductor contact Phys. Rev. 71 10 1947 717 727
29. J. Robertson Band offsets, Schottky barrier heights, and their effects on electronic devices J. Vac. Sci. Technol., A 31 5 2013 (050821/1-18)
30. W. Mönch Metal-semiconductor contacts: electronic properties Surf. Sci. 299-300 0 1994 928 944
31. C.R. Wronski, and D.E. Carlson Surface states and barrier heights of metal-amorphous silicon schottky barriers Solid State Commun. 23 7 1977 421 424
32. M. Stutzmann, D.K. Biegelsen, and R.A. Street Detailed investigation of doping in hydrogenated amorphous silicon and germanium Phys. Rev. B: Condens. Matter 35 11 1987 5666 5701
33. S. Sheng XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells Appl. Surf. Sci. 253 3 2006 1677 1682
34. H. Angermann Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements Appl. Surf. Sci. 258 21 2012 8387 8396
35. M. Kröger Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films Appl. Phys. Lett. 95 12 2009 (p. -)
36. x contact Appl. Phys. Lett. 104 11 2014 (p. -)
37. M. Bivour Doped layer optimization for silicon heterojunctions by injection-level-dependent open-circuit voltage measurements IEEE J. Photovoltaics 4 2 2014 566 574