SymFET: A proposed symmetric graphene tunneling field effect transistor

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 33-34

  Zhao, Pei ^a   Feenstra, R M ^b   Gu, Gong ^c   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c University of Tennessee Knoxville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AC SIGNALS; ANALOG APPLICATIONS; CURRENT PEAK; DC VOLTAGE; DENSITY OF STATE; DEVICE PARAMETERS; DIGITAL OPERATION; FERMI DISTRIBUTION; FERMI FUNCTIONS; FREQUENCY MULTIPLICATION; GATE CONTROL; HIGH ENERGY; HIGH FREQUENCY; IV CHARACTERISTICS; NONLINEAR BEHAVIOR; ON/OFF RATIO; OUTPUT CURRENT; PERFORMANCE METRICES; PHASE SPACES; RESONANCE PEAK; RESONANT PEAKS; ROOM TEMPERATURE; T-GATES; TUNNEL BARRIER; TUNNELING FIELD-EFFECT TRANSISTORS; TUNNELING MECHANISM;

PHASE SPACE METHODS;

GRAPHENE;

EID: 84866920830     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6257006     Document Type: Conference Paper

References (0)