Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy

Applied Physics Letters

Volumn 101, Issue 2, 2012, Pages

  Yan, Rusen ^a,b   Zhang, Qin ^a,b   Li, Wei ^a,c   Calizo, Irene ^a   Shen, Tian ^a,d   Richter, Curt A ^a   Hight Walker, Angela R ^a   Liang, Xuelei ^c   Seabaugh, Alan ^b   Jena, Debdeep ^b   Grace Xing, Huili ^b   Gundlach, David J ^a   Nguyen, N V ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b University of Notre Dame   (United States)

^c PEKING UNIVERSITY   (China)

^d PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BARRIER HEIGHTS; EXPERIMENTAL VALUES; FLAT-BAND VOLTAGE; HEAVILY DOPED; HOLE INJECTION; INTERNAL PHOTOEMISSION SPECTROSCOPIES; P-TYPE SILICON;

ALIGNMENT; CONDUCTION BANDS; ELECTRON INJECTION; PHOTOELECTRON SPECTROSCOPY; SILICA; SILICON; SILICON OXIDES; WORK FUNCTION;

GRAPHENE;

EID: 84863927337     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4734955     Document Type: Article

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