Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

Nano Letters

Volumn 15, Issue 6, 2015, Pages 3815-3819

  Sucharitakul, Sukrit ^a   Goble, Nicholas J ^a   Kumar, U Rajesh ^b,d   Sankar, Raman ^b,c   Bogorad, Zachary A ^e   Chou, Fang Cheng ^b   Chen, Yit Tsong ^b,d   Gao, Xuan P A ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^e Solon High School   (United States)

Author keywords

2D material; FET; Hall effect; InSe; mobility; thin film

Indexed keywords

CARRIER MOBILITY; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; FILM PREPARATION; GRAPHENE; HALL EFFECT; MULTILAYERS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICES; SILICON NITRIDE; SILICON OXIDES; SUBSTRATES; THIN FILMS; TRANSITION METALS;

DIELECTRIC SUBSTRATES; ELECTRONIC TRANSPORT; FET; FIELD-EFFECT MOBILITIES; INSE; TRANSITION METAL DICHALCOGENIDES; TRANSPORT BEHAVIOR; TWO DIMENSIONAL (2 D);

HALL MOBILITY;

EID: 84935873721     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00493     Document Type: Article

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