High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

Optics Express

Volumn 19, Issue 26, 2011, Pages

  Li, Zhi ^a   Fu, Yang ^a   Piels, Molly ^b   Pan, Huapu ^a   Beling, Andreas ^a   Bowers, John E ^b   Campbell, Joe C ^a  

^a University of Virginia   (United States)

^b Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP CHIP DEVICES; PHOTODIODES;

FLIP CHIP; HIGH-POWER; OUTPUT POWER; RESPONSIVITY; REVERSE BIAS; UNI-TRAVELING CARRIER PHOTODIODE; UNI-TRAVELING CARRIERS;

BANDWIDTH;

EID: 83455173609     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.00B385     Document Type: Article

References (15)

1. K. J. Williams, L. T. Nichols, and R. D. Esman, "Photodetector nonlinearity limitations on a high-dynamic range 3 GHz fiber optic link," J. Lightwave Technol. 16(2), 192-199(1998). (Pubitemid 128567240)
2. P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, "Saturation characteristics of fast photodetectors," IEEE Trans. Microw. Theory Tech. 47(7), 1297-1303(1999).
3. T. Ishibashi and N. Shimizu, "Uni-traveling-carrier photodiodes," in Ultrafast Electron. Optoelectron. '97 Conf., Incline Village, NV (1997).
4. Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, "High-saturation-current modified uni-traveling-carrier photodiode with cliff layer," IEEE J. Quantum Electron. 46(5), 626-632(2010).
5. F.-M. Kuo, M.-Z. Chou, and J.-W. Shi, "Linear-cascaded near-ballistic unitraveling-carrier photodiodes with an extremely high saturation current-bandwidth product," J. Lightwave Technol. 29(4), 432-438(2011).
6. S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, and Y. Hirano, "High-current backside-illuminated photodiode array module for optical analog links," J. Lightwave Technol. 28(6), 965-971(2010).
7. J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, "Microscale and nanoscale thermal characterization techniques," J. Electron. Packag. 130(4), 041101(2008).
8. H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, "High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes," IEEE J. Sel. Top. Quantum Electron. 10(4), 709-727(2004).
9. H. Pan, Z. Li, A. Beling, and J. C. Campbell, "Characterization of high-linearity modified uni-traveling carrier photodiodes using three-tone and bias modulation techniques," J. Lightwave Technol. 28(9), 1316-1322(2010).
10. A. Beling, H. Pan, H. Chen, J. C. Campbell, A. Hastings, D. A. Tulchinsky, and K. J. Williams, "Impact of voltage-dependent responsivity on photodiode non-linearity," in Proc. LEOS 2008, Newport Beach, CA, Nov. 2008, pp. 157-158.
11. Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, "Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes," IEEE J. Quantum Electron. 47(10), 1312-1319(2011).
12. H. Pan, A. Beling, H. Chen, J. C. Campbell, and P. D. Yoder, "The influence of nonlinear capacitance on the linearity of a modified unitraveling carrier photodiode," in Proc. MWP 2008, Gold Coast, Australia, Oct. 2008, pp. 82-85.
13. D. A. Tulchinsky, J. B. Boos, D. Park, P. G. Goetz, W. S. Rabinovich, and K. J. Williams, "High-current photodetectors as efficient, linear, and high-power RF output stages," J. Lightwave Technol. 26(4), 408-416(2008). (Pubitemid 351386224)
14. T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, "Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode," IEEE Photon. Technol. Lett. 14(3), 375-377(2002). (Pubitemid 34307659)
15. M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, "High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links," IEEE Photon. Technol. Lett. 20(3), 202-204