Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells

Applied Physics Letters

Volumn 107, Issue 1, 2015, Pages

  Mews, Mathias ^a   Liebhaber, Martin ^a   Rech, Bernd ^a   Korte, Lars ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ENERGY GAP; HETEROJUNCTIONS; HOLE MOBILITY; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; VALENCE BANDS;

AMORPHOUS SILICON LAYERS; BAND-TAIL STATE; DEVICE EFFICIENCY; HOLE TRANSPORTS; SILICON HETEROJUNCTIONS; SILICON SUBOXIDE FILMS; THERMAL EMISSIONS; VALENCE BAND OFFSETS;

AMORPHOUS SILICON;

EID: 84935506166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4926402     Document Type: Article

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