Investigation of selective junctions using a newly developed tunnel current model for solar cell applications

Solar Energy Materials and Solar Cells

Volumn 141, Issue , 2015, Pages 14-23

  Varache, R ^a,d   Leendertz, C ^b   Gueunier Farret, M E ^c   Haschke, J ^b   Munoz D ^a   Korte, L ^b  

^a CEA INES LITEN   (France)

^b HAHN MEITNER INSTITUT   (Germany)

^c UNIV PARIS SUD   (France)

^d CEA INES LITEN   (Germany)

Author keywords

Junction; Recombination; Silicon solar cell; Simulation; Tunnel oxide

Indexed keywords

SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; SOLAR CELLS;

APPROXIMATE DESCRIPTIONS; HIGH POWER CONVERSION; JUNCTION; RECOMBINATION; SIMULATION; SOLAR-CELL APPLICATIONS; TRANSMISSION PROBABILITIES; TUNNEL OXIDES;

TUNNEL JUNCTIONS;

EID: 84930007154     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.05.014     Document Type: Article

References (37)

1. A.M. Froitzheim, M.L.D. Scherff, A. Ulyashin, O. Milch, M. Schmidt, W.R. Fahrner, et al., AFORS-HET: a computer-program for the simulation of heterojunction solar cells to be distributed for public use, in: Proceedings of the 3rd World Conference Photovoltaic Energy Conversion, Osaka, Japan, 2003, pp. 279-282.
2. D.A. Clugston, P.A. Basore, PC1D version 5: 32-Bit solar cell modeling on personal computers, in: Proceedings of the IEEE 26th Photovoltaic Specialists Conference, 1997, pp. 207-210.
3. S. Zhong, X. Hua, and W. Shen Simulation of high-efficiency crystalline silicon solar cells with homo-hetero junctions IEEE J. Photovolt. 60 2013 2104 2110
4. L. Zhao, C.L. Zhou, H.L. Li, H.W. Diao, and W.J. Wang Role of the work function of transparent conductive oxide on the performance of amorphous/crystalline silicon heterojunction solar cells studied by computer simulation Phys. Status Solidi 205 2008 1215 1221
5. R. Stangl, A. Froitzheim, L. Elstner, W. Fuhs, Design criteria for amorphous/crystalline silicon heterojunction solar cells, a simulation study, in: Proceedings of the 17th European Photovoltaic Solar Energy Conference, 2001, p. 1383.
6. Panasonic, Panasonic HIT® Solar Cell Achieves World's Highest Energy Conversion Efficiency∗1 of 25.6%∗2 at Research Level, 2014, (http://panasonic.co.jp/corp/news/official.data/data.dir/2014/04/en140410-4/en140410-4.html).
7. R. Varache, H. Angerman, L. Korte, M.-E. Gueunier-Farret, J.-P. Kleider, Controlled interfacial wet-chemical oxide for amorphous silicon/crystalline silicon heterojunction solar cells, in: Proceedings of the 26th European Photovotlaic Solar Energy Conference, 2012, p. 1582.
8. Fu et al., Tunneling-Junction Soalr Cell With Copper Grid for Concentrated Photovoltaic Application, Patent 0305060 A1, 2012.
9. Heng et al., Back Junction Solar Cell With Tunnel Oxide, Patent 0318340 A1, 2012.
10. F. Feldmann, M. Simon, M. Bivour, C. Reichel, M. Hermle, and S.W. Glunz Carrier-selective contacts for Si solar cells Appl. Phys. Lett. 104 2014 181105
11. F. Feldmann, M. Bivour, C. Reichel, M. Hermle, and S.W. Glunz Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics Sol. Energy Mater. Sol. Cells 120 2014 270 274
12. J. Shewchun, M.A. Green, and F.D. King Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion - II. Experiment Solid State Electron. 17 1974 563 572
13. K. Yang, J.R. East, and G.I. Haddad Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition Solid State Electron. 36 1993 321 330
14. J. Verschraegen, and M. Burgelman Numerical modeling of intra-band tunneling for heterojunction solar cells in scaps Thin Solid Films 515 2007 6276 6279
15. C. Cohen-Tannoudji, B. Diu, and F. Laloë Quantum Mechanics 1973 Hermann Paris
16. R. Clerc Etude des effets quantiques dans les composants CMOS a oxydes de grille ultra minces, modélisation et caractérisation (Ph.D. thesis) 2001 Institut National Polytechnique de Grenoble France
17. R. Varache Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells (Ph.D. thesis) 2012 Université Paris-Sud 11/Technische Universität Berlin France/Germany
18. R. Tsu, and L. Esaki Tunneling in a finite superlattice Appl. Phys. Lett. 22 1 1973 562
19. A. Gehring Simulation of tunneling in semiconductor devices (Ph.D. thesis) 2003 University of Vienna Austria
20. M.I. Vexler, S.E. Tyaginov, and A.F. Shulekin Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor J. Phys. Condens. Matter 17 2005 8057
21. M.G. Ancona, Z. Yu, R.W. Dutton, P.J. Vande Voorde, M. Cao, and D. Vook Density-gradient analysis of MOS tunneling IEEE Trans. Electron Devices 47 2000 2310 2319
22. A. Haque, and K. Alam Accurate modeling of direct tunneling hole current in p-metal-oxide-semiconductor devices Appl. Phys. Lett. 81 2002 667 669
23. K.-N. Yang, H.-T. Huang, M.-C. Chang, C.-M. Chu, Y.-S. Chen, and M.-J. Chen A physical model for hole direct tunneling current in p+ poly-gate pMOSFETs with ultrathin gate oxides IEEE Trans. Electron Devices 47 2000 2161 2166
24. S. Geng, S. Zhang, and H. Onishi Precision thickness measurement of ultra-thin films via XPS Mater. Sci. Forum 437-438 2003 195 198
25. E.A. Irene Applications of spectroscopic ellipsometry to microelectronics Thin Solid Films 233 1993 96 111
26. M. Kleefstra, and G.C. Herman Influence of the image force on the band gap in semiconductors and insulators J. Appl. Phys. 51 1980 4923
27. E.H. Rhoderick, and R.H. Williams Metal-Semiconductor Contacts 1988 Clarendon Press Oxford
28. M.V. Fischetti, S.E. Laux, and E. Crabb Understanding hot-electron transport in silicon devices: is there a shortcut? J. Appl. Phys. 78 1995 1058 1085
29. M. Herrmann, and A. Schenk Field and higherature dependence of the long term charge loss in erasable programmable read only memories: measurements and modeling J. Appl. Phys. 77 1995 4522 4540
30. M.I. Vexler, A.F. Shulekin, C. Dieker, V. Zaporojtschenko, H. Zimmermann, and W. Jaeger Solid State Electron. 45 2001 19 25
31. S. De Wolf, A. Descoeudres, Z.C. Holman, and C. Ballif High-efficiency silicon heterojunction solar cells: a review Green 2 2012 7 24
32. Z.C. Holman, A. Descoeudres, L. Barraud, F.Z. Fernandez, J.P. Seif, and S. De Wolf Current losses at the front of silicon heterojunction solar cells Photovolt. IEEE J. 2 2012 7 15
33. A. Richter, S.W. Glunz, F. Werner, J. Schmidt, and A. Cuevas Improved quantitative description of Auger recombination in crystalline silicon Phys. Rev. B 86 2012 165202
34. R. Varache, J.-P. Kleider, M.-E. Gueunier-Farret, and L. Korte Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation Mater. Sci. Eng. B 178 2013 593
35. P.A. Anderson The contact difference of potential between tungsten and barium. The external work function of barium Phys. Rev. 47 1935 958 964
36. M.J. Kerr, and A. Cuevas General parameterization of Auger recombination in crystalline silicon J. Appl. Phys. 91 2002 2473 2480
37. G.A.M. Hurkx, D.B.M. Klaassen, and M.P.G. Knuvers A new recombination model for device simulation including tunneling IEEE Trans. Electron Devices 39 1992 331 338