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Journal of Applied Physics

Volumn 112, Issue 9, 2012, Pages

A comprehensive study of hole collection in heterojunction solar cells

(4) Crandall, Richard S a Iwaniczko, Eugene a Li, Jian V a Page, Mathew R a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL OPERATION; COMPREHENSIVE STUDIES; CRYSTALLINE SILICON WAFERS; DIRECT TUNNELING; DOMINANT MODE; HETEROJUNCTION SOLAR CELLS; HIGH ACTIVATION ENERGY; I-LAYER; LOW TEMPERATURES; MEASUREMENT CONDITIONS; NEAR ROOM TEMPERATURE; P-TYPE; ROOM TEMPERATURE; SILICON HETEROJUNCTIONS; SYSTEMATIC INVESTIGATIONS; THERMAL EMISSIONS; THERMALLY ACTIVATED; VALENCE BAND OFFSETS;

AMORPHOUS SILICON; DEFECTS; SILICON WAFERS; SOLAR CELLS;

HETEROJUNCTIONS;

EID: 84870882001 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4764031 Document Type: Article

Times cited : (19)

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