Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiOx:H, 0 < x < 2)

Applied Physics Letters

Volumn 106, Issue 3, 2015, Pages

  Liebhaber, M ^a   Mews, M ^a   Schulze, T F ^a   Korte, L ^a   Rech, B ^a   Lips, K ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEFECT DENSITY; HETEROJUNCTIONS; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON OXIDES; SOLAR CELLS; VALENCE BANDS;

CRYSTALLINE SILICONS; ELECTRONIC QUALITY; ELECTRONIC TRANSPORT; HETERO INTERFACES; HETEROJUNCTION SOLAR CELLS; INTERFACE DEFECTS; JUNCTION PARAMETERS; VALENCE BAND OFFSETS;

AMORPHOUS SILICON;

EID: 84923886550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4906195     Document Type: Article

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