Conduction- and valence-band offsets at the hydrogenated amorphous silicon-carbon/crystalline silicon interface via capacitance techniques

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 7, 1996, Pages 4885-4890

  Essick, John M ^a   Nobel, Zachariah ^a   Li, Yuan Min ^b   Bennett, Murray S ^b  

^a REED COLLEGE   (United States)

^b Solarex Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343429304     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.4885     Document Type: Article

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