Insight into the output characteristics of III-V tunneling field effect transistors

Applied Physics Letters

Volumn 102, Issue 9, 2013, Pages

  Rajamohanan, Bijesh ^a   Mohata, Dheeraj ^a   Ali, Ashkar ^a   Datta, Suman ^a  

^a The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SATURATION; DELAYED OUTPUT; OUTPUT CHARACTERISTICS; PHYSICS-BASED; POTENTIAL PROFILES; SATURATION VOLTAGE; SOURCE DOPING; TUNNELING FIELD-EFFECT TRANSISTORS;

PHYSICAL PROPERTIES; PHYSICS;

FIELD EFFECT TRANSISTORS;

EID: 84875158719     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794536     Document Type: Article

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