InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 782-784

  Zhou, Guangle ^a   Lu, Yeqing ^a   Li, Rui ^a   Zhang, Qin ^a   Liu, Qingmin ^a   Vasen, Tim ^a   Zhu, Haijun ^b   Kuo, Jenn Ming ^b   Kosel, Tom ^a   Wistey, Mark ^a   Fay, Patrick ^a   Seabaugh, Alan ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

^b IntelliEPI   (United States)

Author keywords

Heterojunction; InGaAs; InP; metal oxide semiconductor field effect transistors (MOSFETs); nanoelectronics; passivation; subthreshold swing; transistors; tunnel field effect transistor (TFET); tunneling

Indexed keywords

DEVICE PERFORMANCE; EQUIVALENT OXIDE THICKNESS; GAAS; INGAAS; INGAAS/INP; INP; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; ON-CURRENTS; SEMICONDUCTOR LAYERS; SUBTHRESHOLD SWING; TUNNEL FET;

CHEMICAL VAPOR DEPOSITION; ELECTRON TUNNELING; MOSFET DEVICES; NANOELECTRONICS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TRANSISTORS;

HETEROJUNCTIONS;

EID: 84861709323     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2189546     Document Type: Article

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