Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon

Applied Physics Letters

Volumn 106, Issue 17, 2015, Pages

  Nampalli, N ^a   Hallam, B ^a   Chan, C ^a   Abbott, M ^a   Wenham, S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; DEFECTS; HYDROGEN; PASSIVATION; RECOVERY; SILICON; SILICON NITRIDE;

COMMERCIAL GRADE; CZOCHRALSKI SILICON; CZOCHRALSKI SILICON WAFERS; DEFECT PASSIVATION; HYDROGEN BASED MODELS; LIGHT-INDUCED DEGRADATION; MINORITY CARRIER LIFETIMES; NON-HYDROGEN SPECIES;

SILICON WAFERS;

EID: 84929096178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4919385     Document Type: Article

References (36)

1. H. Fischer and W. Pschunder, " Investigation of photon and thermal induced changes in silicon solar cells," in Proceedings of the 10th IEEE Photovoltaic Specialists Conference (1973), p. 404.
2. S. W. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling, " Degradation of carrier lifetime in Cz silicon solar cells," Sol. Energy Mater. Sol. Cells 65, 219-229 (2001). 10.1016/S0927-0248(00)00098-2
3. A. Herguth, G. Schubert, M. Kaes, and G. Hahn, " Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon," Prog. Photovoltaics 16, 135-140 (2008). 10.1002/pip.779
4. K. Bothe and J. Schmidt, " Electronically activated boron-oxygen-related recombination centers in crystalline silicon," J. Appl. Phys. 99, 013701 (2006). 10.1063/1.2140584
5. A. Herguth, G. Schubert, M. Kaes, and G. Hahn, " A new approach to prevent the negative impact of the metastable defect in boron doped Cz silicon solar cells," in Proceedings of the 4th IEEE World Conference on Photovoltaic Energy Conversion (2006), Vol. 1, pp. 940-943.
6. B. J. Hallam, S. R. Wenham, P. G. Hamer, M. D. Abbott, A. Sugianto, C. E. Chan, A. M. Wenham, M. G. Eadie, and G. Xu, " Hydrogen passivation of B-O defects in Czochralski silicon," Energy Procedia 38, 561-570 (2013). 10.1016/j.egypro.2013.07.317
7. S. Wilking, C. Beckh, S. Ebert, A. Herguth, and G. Hahn, " Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes," Sol. Energy Mater. Sol. Cells 131, 2-8 (2014). 10.1016/j.solmat.2014.06.027
8. D. C. Walter, B. Lim, K. Bothe, V. V. Voronkov, R. Falster, and J. Schmidt, " Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon," Appl. Phys. Lett. 104, 042111 (2014). 10.1063/1.4863674
9. K. A. Münzer, " Hydrogenated silicon nitride for regeneration of light induced degradation," in Proceedings of the 24th European Photovoltaic Solar Energy Conference (2009), pp. 1558-1561.
10. G. Krugel, W. Wolke, J. Geilker, S. Rein, and R. Preu, " Impact of hydrogen concentration on the regeneration of light induced degradation," Energy Procedia 8, 47-51 (2011). 10.1016/j.egypro.2011.06.100
11. S. Dubois, F. Tanay, J. Veirman, N. Enjalbert, J. Stendera, S. Butte, P. Pochet, D. Caliste, Y. Mao, D. Timerkaeva, D. Blanc, K. Fraser, M. Lemiti, O. Palais, I. Perichaud, B. Dridi Rezgui, V. Mong-The Yen, M. Pasquinelli, M. Gerard, F. Madon, and N. Le Quang. " The BOLID Project: Suppression of the boron-oxygen related light-induced-degradation," in Proceedings of the 27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany (2012), pp. 749-754.
12. W. A. Lanford and M. J. Rand, " The hydrogen content of plasma-deposited silicon nitride," J. Appl. Phys. 49, 2473-2477 (1978). 10.1063/1.325095
13. M. Maeda and H. Nakamura, " Infrared spectroscopic study of hydrogenated and deuterated silicon nitride films prepared from plasma enhanced deposition," J. Appl. Phys. 55, 3068 (1984). 10.1063/1.333302
14. S. Wilking, S. Ebert, A. Herguth, and G. Hahn, " Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon," J. Appl. Phys. 113, 194503 (2013). 10.1063/1.4804310
15. B. Lim, K. Bothe, and J. Schmidt, " Accelerated deactivation of the boron-oxygen-related recombination centre in crystalline silicon," Semicond. Sci. Technol. 26, 095009 (2011). 10.1088/0268-1242/26/9/095009
16. S. Wenham, P. Hamer, B. Hallam, A. Sugianto, C. Chan, L. Song, P. Lu, A. Wenham, L. Mai, and C. Chong, " Advanced hydrogenation of silicon solar cells," World Patent application WO 2013/173867 (28 November 2013).
17. C. Herring, N. Johnson, and C. Van de Walle, " Energy levels of isolated interstitial hydrogen in silicon," Phys. Rev. B 64 (12), 125209 (2001). 10.1103/PhysRevB.64.125209
18. C. Seager, R. Anderson, and J. Panitz, " The diffusion of hydrogen in silicon and mechanisms for unintentional hydrogenation during ion beam processing," J. Mater. Res. 2 (01), 96-106 (1987). 10.1557/JMR.1987.0096
19. B. Sopori, " Silicon solar-cell processing for minimizing the influence of impurities and defects," J. Electron. Mater. 31 (10), 972-980 (2002). 10.1007/s11664-002-0030-x
20. P. Karzel, J. Junge, and G. Hahn, " Mapping of hydrogen bond energies in EFG silicon samples by analysis of spatially resolved minority charge carrier lifetimes after annealing steps," in Proceedings of the 24th European Photovoltaic Solar Energy Conference (2009), pp. 2023-2027.
21. V. V. Voronkov, R. Falster, B. Lim, and J. Schmidt, " Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening," J. Appl. Phys. 112, 113717 (2012). 10.1063/1.4768688
22. A. Cuevas, M. Stocks, S. Armand, M. Stuckings, A. Blakers, and F. Ferrazza, " High minority carrier lifetime in phosphorus-gettered multicrystalline silicon," Appl. Phys. Lett. 70, 1017 (1997). 10.1063/1.118469
23. I. Perichaud, " Gettering of impurities in solar silicon," Sol. Energy Mater. Sol. Cells 72 (1-4), 315-326 (2002). 10.1016/S0927-0248(01)00179-9
24. J. Schmidt, K. Bothe, and R. Hezel, " Formation and annihilation of the metastable defect in boron-doped Czochralski silicon," in Proceedings of the 29th IEEE Photovoltaic Specialists Conference (2002), pp. 178-181.
25. D. Walter, B. Lim, V. Voronkov, R. Falster, and J. Schmidt, " Investigation of the lifetime stability after regeneration in boron-doped Cz silicon," in Proceedings of the 29th European Photovoltaic Solar Energy Conference (2014), pp. 555-559.
26. R. A. Sinton and A. Cuevas, " Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data," Appl. Phys. Lett. 69, 2150-2512 (1996). 10.1063/1.117723
27. H. Nagel, C. Berge, and A. G. Aberle, " Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors," J. Appl. Phys. 86, 6218 (1999). 10.1063/1.371633
28. A. Richter, S. W. Glunz, F. Werner, J. Schmidt, and A. Cuevas, " Improved quantitative description of Auger recombination in crystalline silicon," Phys. Rev. B 86, 165202 (2012). 10.1103/PhysRevB.86.165202
29. J. Schmidt and A. G. Aberle, " Accurate method for the determination of bulk minority-carrier lifetimes of mono-and multicrystalline silicon wafers," J. Appl. Phys. 81, 6186 (1997). 10.1063/1.364403
30. A. L. Blum, J. S. Swirhun, R. A. Sinton, and A. Kimmerle, " An updated analysis to the WCT-120 QSSPC measurement system using advanced device physics," in Proceedings of the 28th European Photovoltaic Solar Energy Conference (2013), pp. 1521-1523.
31. D. Macdonald and A. Cuevas, " Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline silicon," Phys. Rev. B 67 (7), 075203 (2003). 10.1103/PhysRevB.67.075203
32. S. Rein and S. W. Glunz, " Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy," Appl. Phys. Lett. 82, 1054-1056 (2003). 10.1063/1.1544431
33. B. Lim, K. Bothe, and J. Schmidt, " Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon," J. Appl. Phys. 107, 123707 (2010). 10.1063/1.3431359
34. B. Sopori, M. I. Symko, R. Reedy, K. Jones, and R. Matson, " Mechanism(s) of hydrogen diffusion in silicon solar cells during forming gas anneal," in Proceedings of the 26th IEEE Photovoltaic Specialists Conference (1997), pp. 25-30.
35. B. Sopori, R. Reedy, K. Jones, L. Gedvilas, B. Keyes, Y. Yan, M. Al-Jassim, V. Yelundur, and A. Rohatgi, " Damage-layer-mediated H diffusion during SiN: H processing: A comprehensive model," in Proceedings of the 4th IEEE World Conference on Photovoltaic Energy Conversion (2006), Vol. 1, pp. 1028-1031.
36. S. Wilking, S. Ebert, A. Herguth, and G. Hahn, " Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon," J. Appl. Phys. 114, 194512 (2013). 10.1063/1.4833243