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Volumn 38, Issue , 2013, Pages 561-570

Hydrogen passivation of B-O defects in Czochralski silicon

Author keywords

Boron oxygen defect; Czochralksi silicon; Hydrogen passivation; Light induced degradation

Indexed keywords


EID: 84891558832     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2013.07.317     Document Type: Conference Paper
Times cited : (73)

References (54)
  • 7
    • 0042926667 scopus 로고    scopus 로고
    • Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon
    • Bothe K, Hezel R, Schmidt J. Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon. Applied Physics Letters 2003; 83: 1125-1127.
    • (2003) Applied Physics Letters , vol.83 , pp. 1125-1127
    • Bothe, K.1    Hezel, R.2    Schmidt, J.3
  • 8
    • 0000844316 scopus 로고
    • Theory of recombination-enhanced defect reactions in semiconductors
    • Weeks J, Tully J, Kimerling L. Theory of recombination-enhanced defect reactions in semiconductors. Physical Review B 1975; 12(8): 3286.
    • (1975) Physical Review B , vol.12 , Issue.8 , pp. 3286
    • Weeks, J.1    Tully, J.2    Kimerling, L.3
  • 10
    • 30844465492 scopus 로고    scopus 로고
    • Electronically activated boron-oxygen-related recombination centers in crystalline silicon
    • Bothe K, Schmidt J. Electronically activated boron-oxygen-related recombination centers in crystalline silicon. Journal of Applied Physics 2006; 99(1): 013701.
    • (2006) Journal of Applied Physics , vol.99 , Issue.1 , pp. 013701
    • Bothe, K.1    Schmidt, J.2
  • 12
    • 0040028982 scopus 로고    scopus 로고
    • Minority carrier lifetime degradation in boron-doped czochralski silicon
    • Glunz S, Rein S, Lee J., Warta W. Minority carrier lifetime degradation in boron-doped Czochralski silicon. Journal of Applied Physics 2001; 90: 2397.
    • (2001) Journal of Applied Physics , vol.90 , pp. 2397
    • Glunz, S.1    Rein, S.2    Lee, J.3    Warta, W.4
  • 14
    • 1442337113 scopus 로고    scopus 로고
    • Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
    • Schmidt J, Bothe K. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon. Physics Review B 2004; 69(2): 024107.
    • (2004) Physics Review B , vol.69 , Issue.2 , pp. 024107
    • Schmidt, J.1    Bothe, K.2
  • 15
    • 0035794735 scopus 로고    scopus 로고
    • Aggregation kinetics of thermal double donors in silicon
    • Lee Y, Von Boehm J, Pesola M, Nieminen R. Aggregation kinetics of thermal double donors in silicon. Physical Review Letters 2001; 86(14): 3060-3063.
    • (2001) Physical Review Letters , vol.86 , Issue.14 , pp. 3060-3063
    • Lee, Y.1    Von Boehm, J.2    Pesola, M.3    Nieminen, R.4
  • 16
    • 0013132562 scopus 로고    scopus 로고
    • Permanent reduction of excess-carrier-induced recombination centers in solar grade czochralski silicon by a short yet effective anneal
    • Nagel H, Merkle A, Metz A Hezel R. Permanent reduction of excess-carrier-induced recombination centers in solar grade Czochralski silicon by a short yet effective anneal. Proceedings of the 16th European PVSEC 2000, pp. 1197-1200.
    • (2000) Proceedings of the 16th European PVSEC , pp. 1197-1200
    • Nagel, H.1    Merkle, A.2    Metz, A.3    Hezel, R.4
  • 18
    • 20444401538 scopus 로고    scopus 로고
    • Fundamental boron-oxygen-related carrier lifetime limit in mono-and multicrystalline silicon
    • Bothe K, Sinton R Schmidt J. Fundamental boron-oxygen-related carrier lifetime limit in mono-and multicrystalline silicon. Progress in Photovoltaics:Research and Applications 2005; 13(4): 287-296.
    • (2005) Progress in Photovoltaics:Research and Applications , vol.13 , Issue.4 , pp. 287-296
    • Bothe, K.1    Sinton, R.2    Schmidt, J.3
  • 19
    • 54949095384 scopus 로고    scopus 로고
    • Solar cells on low-resistivity boron-doped czochralski-grown silicon with stabilized efficiencies of 20%
    • Lim B, Hermann S, Bothe K., Schmidt J, Brendel R. Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20%. Applied Physics Letters 2008; 93(16): 162102.
    • (2008) Applied Physics Letters , vol.93 , Issue.16 , pp. 162102
    • Lim, B.1    Hermann, S.2    Bothe, K.3    Schmidt, J.4    Brendel, R.5
  • 22
    • 41049105821 scopus 로고    scopus 로고
    • Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon
    • Herguth A Schubert G, Käs M, Hahn G. Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon. Progress in Photovoltaics: Research and Applications 2008; 16(2): 135-140.
    • (2008) Progress in Photovoltaics: Research and Applications , vol.16 , Issue.2 , pp. 135-140
    • Herguth, A.1    Schubert, G.2    Käs, M.3    Hahn, G.4
  • 23
    • 0000853846 scopus 로고
    • Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering
    • Paul W, Lewis A, Connell G., Moustakas T. Doping, Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering. Solid State Communications 1976; 20(10): 969-972.
    • (1976) Solid State Communications , vol.20 , Issue.10 , pp. 969-972
    • Paul, W.1    Lewis, A.2    Connell, G.3    Doping, M.T.4
  • 24
    • 0000547150 scopus 로고
    • Observation of enhanced hydrogen diffusion in solar cell silicon
    • Sopori B, Jones K Deng X. Observation of enhanced hydrogen diffusion in solar cell silicon. Applied Physics Letters 1992; 61(21): 2560-2562.
    • (1992) Applied Physics Letters , vol.61 , Issue.21 , pp. 2560-2562
    • Sopori, B.1    Jones, K.2    Deng, X.3
  • 26
    • 0001902699 scopus 로고
    • The diffusion of hydrogen in silicon and mechanisms for "unintentional" hydrogénation during ion beam processing
    • Seager C, Anderson R Panitz J. The diffusion of hydrogen in silicon and mechanisms for "unintentional" hydrogénation during ion beam processing. Journal of Materials Research 1987; 2 (1): 96-106.
    • (1987) Journal of Materials Research , vol.2 , Issue.1 , pp. 96-106
    • Seager, C.1    Anderson, R.2    Panitz, J.3
  • 27
    • 0035737204 scopus 로고    scopus 로고
    • Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
    • Sopori B, Zhang Y, Ravindra N. Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties. Journal of Electronic Materials 2001; 30(12): 1616-1627.
    • (2001) Journal of Electronic Materials , vol.30 , Issue.12 , pp. 1616-1627
    • Sopori, B.1    Zhang, Y.2    Ravindra, N.3
  • 28
    • 36549100732 scopus 로고
    • Real-time observations of hydrogen drift and diffusion in silicon
    • Seager C, Anderson R. Real-time observations of hydrogen drift and diffusion in silicon. Applied Physics Letters 1988; 53(13): 1181-1183.
    • (1988) Applied Physics Letters , vol.53 , Issue.13 , pp. 1181-1183
    • Seager, C.1    Anderson, R.2
  • 29
    • 0036810463 scopus 로고    scopus 로고
    • Silicon solar-cell processing for minimizing the influence of impurities and defects
    • Sopori B. Silicon solar-cell processing for minimizing the influence of impurities and defects. Journal of Electronic Materials 2002; 31(10): 972-980.
    • (2002) Journal of Electronic Materials , vol.31 , Issue.10 , pp. 972-980
    • Sopori, B.1
  • 30
    • 0032516662 scopus 로고    scopus 로고
    • Defects in semiconductors: Some fatal, some vital
    • Queisser H, Haller E. Defects in semiconductors: Some fatal, some vital. Science 1998; 281(5379): 945-950.
    • (1998) Science , vol.281 , Issue.5379 , pp. 945-950
    • Queisser, H.1    Haller, E.2
  • 31
    • 0242273208 scopus 로고    scopus 로고
    • Silicon nitride processing for control of optical and electronic properties of silicon solar cells
    • Sopori B. Silicon nitride processing for control of optical and electronic properties of silicon solar cells. Journal of Electronic Materials 2003; 32(10): 1034-1042.
    • (2003) Journal of Electronic Materials , vol.32 , Issue.10 , pp. 1034-1042
    • Sopori, B.1
  • 35
    • 36549104436 scopus 로고
    • Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon
    • Johnson N, Moyer M. Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon. Applied Physics Letters 1985; 46(8): 787-789.
    • (1985) Applied Physics Letters , vol.46 , Issue.8 , pp. 787-789
    • Johnson, N.1    Moyer, M.2
  • 37
    • 36549095684 scopus 로고
    • Hydrogen in crystalline silicon: A deep donor?
    • Capizzi M, Mittiga A. Hydrogen in crystalline silicon: A deep donor?. Applied Physics Letters 1987; 50(14): 918-920.
    • (1987) Applied Physics Letters , vol.50 , Issue.14 , pp. 918-920
    • Capizzi, M.1    Mittiga, A.2
  • 38
    • 0000687859 scopus 로고
    • Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
    • Johnson N, Herring C, Chadi D. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon. Physical review letters 1986; 56(7): 769-772.
    • (1986) Physical Review Letters , vol.56 , Issue.7 , pp. 769-772
    • Johnson, N.1    Herring, C.2    Chadi, D.3
  • 39
    • 0001723404 scopus 로고
    • Modeling of hydrogen diffusion in n-and p-type silicon
    • Mathiot D. Modeling of hydrogen diffusion in n-and p-type silicon. Physical Review B 1989; 40(8) 5867-5870.
    • (1989) Physical Review B , vol.40 , Issue.8 , pp. 5867-5870
    • Mathiot, D.1
  • 40
    • 0031621997 scopus 로고    scopus 로고
    • A two-step low-temperature process for a pn juntion formation due to hydrogen enhanced thermal donor formation in p-type czochralski silicon
    • Job R, Fahrner W, Kazuchits N., Ulyashin A, A two-Step low-temperature process for a pn juntion formation due to hydrogen enhanced thermal donor formation in p-type Czochralski silicon. MRS Proceedings 1998; 513(1): 337.
    • (1998) MRS Proceedings , vol.513 , Issue.1 , pp. 337
    • Job, R.1    Fahrner, W.2    Kazuchits, N.3    Ulyashin, A.4
  • 41
    • 51149214576 scopus 로고
    • Deactivation of the boron acceptor in silicon by hydrogen
    • Sah C, Sun J, Tzou J. Deactivation of the boron acceptor in silicon by hydrogen. Applied Physics Letters 1983; 43(2): 204-206.
    • (1983) Applied Physics Letters , vol.43 , Issue.2 , pp. 204-206
    • Sah, C.1    Sun, J.2    Tzou, J.3
  • 44
    • 80052082213 scopus 로고    scopus 로고
    • Impact of hydrogen concentration on the regeneration of light induced degradation
    • Krugel G, Wolke W, Geilker J., Rein S, Preu R. Impact of Hydrogen Concentration on the Regeneration of Light Induced Degradation. Energy Procedia 2011; 8: 47-51.
    • (2011) Energy Procedia , vol.8 , pp. 47-51
    • Krugel, G.1    Wolke, W.2    Geilker, J.3    Rein, S.4    Preu, R.5
  • 46
    • 77954198407 scopus 로고    scopus 로고
    • Impact of oxygen on the permanent deactivation of boron-oxygen related recombination centers in crystalline silicon
    • Lim B, Bothe K, Schmidt J. Impact of oxygen on the permanent deactivation of boron-oxygen related recombination centers in crystalline silicon. Journal of Applied Physics 2010; 107(12): 123707.
    • (2010) Journal of Applied Physics , vol.107 , Issue.12 , pp. 123707
    • Lim, B.1    Bothe, K.2    Schmidt, J.3
  • 49
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of the current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
    • Sinton R, Cuevas A, Contactless determination of the current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data. Applied Physics Letters 1996; 69(17): 2510-2512.
    • (1996) Applied Physics Letters , vol.69 , Issue.17 , pp. 2510-2512
    • Sinton, R.1    Cuevas, A.2
  • 50
    • 27344442272 scopus 로고    scopus 로고
    • Self-consistent determination of the generation rate from photoconductance measurements
    • Trupke T, Bardos R, Abbott M. Self-consistent determination of the generation rate from photoconductance measurements. Applied Physics Letters 2005; 87(18): 184102.
    • (2005) Applied Physics Letters , vol.87 , Issue.18 , pp. 184102
    • Trupke, T.1    Bardos, R.2    Abbott, M.3
  • 52
    • 41449110204 scopus 로고    scopus 로고
    • Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication
    • Sheoran M, Upadhyaya A, Rohatgi A. Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication. Solid-State Electronics 2008; 52(5): 612-617.
    • (2008) Solid-State Electronics , vol.52 , Issue.5 , pp. 612-617
    • Sheoran, M.1    Upadhyaya, A.2    Rohatgi, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.