Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon

Journal of Applied Physics

Volumn 113, Issue 19, 2013, Pages

  Wilking, S ^a   Herguth, A ^a   Hahn, G ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; HYDROGEN DIFFUSION BARRIERS; MINORITY CARRIER LIFETIMES; PROCESS PARAMETERS; REGENERATION BEHAVIOR; REGENERATION PROCESS; VARIABLE THICKNESS; WORKING PRINCIPLES;

DEFECTS; OXYGEN; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE;

HYDROGEN;

EID: 84878391669     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804310     Document Type: Article

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