Formation and annihilation of the metastable defect in boron-doped Czochralski silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 178-181

  Schmidt, Jan ^a   Bothe, Karsten ^a   Hezel, Rudolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON; DOPING (ADDITIVES); SILICON SOLAR CELLS; TEMPERATURE;

BORON-DOPED CZOCHRALSKI SILICON; DEFECT ANNIHILATION PROCESS; DEFECT GENERATION PROCESS; FAST-DIFFUSING OXYGEN DIMERS; INTERSTITIAL OXYGEN DENSITY; LIGHT-INDUCED EFFICIENCY DEGRADATION; LIGHT-INDUCED METASTABLE DEFECT;

SILICON WAFERS;

EID: 0036953923     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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