Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Voronkov, V V ^a   Falster, R ^a   Lim, B ^b   Schmidt, J ^b  

^a MEMC Electronic Materials   (Italy)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; DEACTIVATION PROCESS; DEFECT COMPLEX; ELECTRON LIFETIME; INTERSTITIAL BORON; LINEAR FUNCTIONS; LINEAR LAW; MODEL-BASED OPC; NANOPRECIPITATES; PREANNEALING; RECOMBINATION CENTRES; SILICON SAMPLES;

BORON; OSTWALD RIPENING; OXYGEN; RATE CONSTANTS; SILICON;

ANNEALING;

EID: 84871208725     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768688     Document Type: Article

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