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Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

Impact of oxygen on the permanent deactivation of boron-oxygen-related recombination centers in crystalline silicon

(3) Lim, Bianca a Bothe, Karsten a Schmidt, Jan a

a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; BORON-OXYGEN; CRYSTALLINE SILICONS; CZOCHRALSKI; DEACTIVATION PROCESS; DEACTIVATION RATE; DEFECT REACTIONS; ELEVATED TEMPERATURE; INTERSTITIAL OXYGEN CONCENTRATION; LONG-TERM ANNEALING; RECOMBINATION CENTERS; THERMAL DONOR;

BORON; CARRIER LIFETIME;

OXYGEN;

EID: 77954198407 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3431359 Document Type: Article

Times cited : (29)

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