Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

Journal of Applied Physics

Volumn 114, Issue 19, 2013, Pages

  Wilking, S ^a   Ebert, S ^a   Herguth, A ^a   Hahn, G ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON MATERIALS; CRYSTALLINE SILICONS; DEGRADATION EFFECT; ELEVATED TEMPERATURE; HYDROGEN PASSIVATION; HYDROGENATED SILICON; REGENERATION PROCESS; SILICON NITRIDE PASSIVATION;

DEFECTS; HYDROGENATION; OXYGEN; PASSIVATION; SILICON; SILICON NITRIDE;

HYDROGEN;

EID: 84888326330     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4833243     Document Type: Article

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