Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Solar Energy Materials and Solar Cells

Volumn 131, Issue , 2014, Pages 2-8

  Wilking, Svenja ^a   Beckh, Cornelius ^a   Ebert, Sebastian ^a   Herguth, Axel ^a   Hahn, Giso ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Boron oxygen; Hydrogen; Regeneration; Silicon

Indexed keywords

SILICON;

BORON-OXYGEN; HYDROGEN STATE; REGENERATION; REGENERATION PROCESS;

HYDROGEN;

EID: 84908454871     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.06.027     Document Type: Article

References (29)

1. H. Fischer, W. Pschunder, Investigation of photon and thermal induced changes in siliconsolar cells, in: Proceedings of the 10th IEEE PVSC, Palo Alto, USA, 1973 p. 404.
2. J. Knobloch, S.W. Glunz, D. Biro, W. Warta, E. Schaffer, W. Wettling, Solar cells with efficiencies above 21% processed from Czochralski grown silicon, in: Proceedings of the 25th IEEE PVSC, New York, USA, 1996, p. 405.
3. J. Schmidt, and A.G. Aberle Accurate method for the determination of bulk minority-carrier lifetimes of mono-and multicrystalline silicon wafers J. Appl. Phys. 81 1997 6186
4. S. Dubois, N. Enjalbert, and J.P. Garandet Slow down of the light-induced-degradation in compensated solar-grade multicrystalline silicon Appl. Phys. Lett. 93 10 2008 103510
5. M. Forster, E. Fourmond, F.E. Rougieux, A. Cuevas, R. Gotoh, K. Fujiwara, and M. Lemiti Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron Appl. Phys. Lett. 100 4 2012 042110
6. D. Macdonald, A. Liu, A. Cuevas, B. Lim, and J. Schmidt The impact of dopant compensation on the boron-oxygen defect in p-and n-type crystalline silicon Phys. Status Solidi A 208 3 2011 559
7. S.W. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling Degradation of carrier lifetime in Cz silicon solar cells Sol. Energy Mater. Sol. Cells 65 2001 219
8. K. Bothe, and J. Schmidt Electronically activated boron-oxygen-related recombination centers in crystalline silicon J. Appl. Phys. 99 2006 013701
9. V.V. Voronkov, and R. Falster Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells J. Appl. Phys. 107 2010 053509
10. A. Herguth, G. Schubert, M. Kaes, G. Hahn, in: Proceedings of the 32nd IEEE PVSC (4th WCPEC), Waikoloa, USA, 2006, p. 940.
11. A. Herguth, G. Schubert, M. Kaes, and G. Hahn Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon Prog. Photovol. Res. Appl. 16 2007 135
12. K.A. Münzer, Hydrogenated silicon nitride for regeneration of light induced degradation, in: Proceedings of the 24th EU-PVSEC, Hamburg, Germany, 2009 p. 1558.
13. G. Krugel, W. Wolke, J. Geilker, S. Rein, and R. Preu Impact of hydrogen concentration on the regeneration of light induced degradation Energy Proc. 8 2011 47
14. S. Wilking, A. Herguth, and G. Hahn Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon J. Appl. Phys. 113 2013 194503
15. S. Wilking, A. Herguth, and G. Hahn Influence of hydrogenated passivation layers on the regeneration of boron-oxygen related defects Energy Proc. 38 2013 642
16. S. Wilking, S. Ebert, A. Herguth, G. Hahn, Influence of short high temperature steps on the regeneration of boron-oxygen related defects, in: Proceedings of the 28th EUPVSEC, Paris, France, 2013, p. 34.
17. S. Wilking, S. Ebert, A. Herguth, and G. Hahn Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon J. Appl. Phys. 114 2013 194512
18. S.J. Pearton Hydrogen in crystalline semiconductors Appl. Phys. A 43 1987 153
19. S.A. McQuaid Solubility of hydrogen in silicon at 1300 °C Appl. Phys. Lett. 62 14 1993 1612
20. A.W.R. Leitch, V. Alex, and J. Weber Raman spectroscopy of hydrogen molecules in crystalline silicon Phys. Rev. Lett. 81 2 2000 421
21. R. Jones, B.J. Coomer, J.P. Goss, B. Hourahine, and A. Resende The interaction of hydrogen with deep level defects in silicon Solid State Phenom. 71 2000 173
22. C.H. Saeger Two-step debonding of hydrogen from boron acceptors in silicon Appl. Phys. Lett. 59 5 1991 585
23. T. Zundel, and J. Weber Boron reactivation kinetics in hydrogenated silicon after annealing in the dark or under illumination Phys. Rev. B 43 5 1991 4361
24. C.G. Van de Walle Energies of various configurations of hydrogen in silicon Phys. Rev. B 49 1994 4579
25. A. Herguth, and G. Hahn Kinetics of the boron-oxygen related defect in theory and experiment J. Appl. Phys. 108 2010 114509
26. C. Herring, N.M. Johnson, and C.G. Van de Walle Energy levels of isolated interstitial hydrogen in silicon Phys. Rev. B 64 2001 125209
27. Y.L. Huang, Y. Ma, R. Job, and A.G. Ulyashin Hydrogen diffusion at moderate temperatures in p -type Czochralski silicon J. Appl. Phys. 96 2004 7080
28. D. Mathiot Modelling of hydrogen diffusion in n- and p-type silicon Phys. Rev. B 40 8 1989 5867
29. K. Bothe and J. Schmidt, Fast-forming boron-oxygen-related recombination center in crystalline silicon, Appl. Phys. Lett. 87 (2005) 262108.