Damage-layer-mediated H diffusion during SiN:H processing: A comprehensive model

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 1028-1031

  Sopori, Bhushan ^a   Reedy, Robert ^a   Jones, Kim ^a   Gedvilas, Lynn ^a   Keyes, Brian ^a   Yan, Fa ^a   Al Jassim, Mowafak ^a   Yelundur, Vijay ^b   Rohatgi, Ajeet ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE TOLERANCE; ELECTRON TRAPS; PASSIVATION; PHASE COMPOSITION; SURFACE DIFFUSION;

PASSIVATION CHARACTERISTICS; SURFACE DAMAGED LAYERS;

SILICON NITRIDE;

EID: 41749097844     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279294     Document Type: Conference Paper

References (5)

1. Bhushan Sopori, et.al., "A comprehensive Model of Hydrogen Transport into a Solar Cell During Silicon Nitride Processing for Fire-Through Metallization," 31 IEEE PVSC, 2005, pp 1039-1042.
2. st World Conference on Photovoltaic Energy Conversion, Hawaii, 1994, p 1242.
3. V. Yelundur, A. Rohatgi, J-W. Jeong, A. M. Gabor, J.I. Hanoka, and R.L.Wallace, Procd. IEEE PVSC, 2000, p9.
4. Z. Lu, et.al, "Fourier transform infrared study of rapid thermal annealing of a-Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor deposition," J. Vac. Sci., A13(3), 1995, pp 607-613.
5. A. Van Wieringen and N. Warmholtz, Physica 22, 849 (1956).