Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 7, 2003, Pages

  Macdonald, Daniel ^a   Cuevas, Andrés ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; COMPARATIVE STUDY; CRYSTAL; DENSITY; ELECTRON; ENERGY; INJECTION; MEASUREMENT; MODEL; STATISTICS; TEMPERATURE DEPENDENCE;

EID: 0037441236     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.075203     Document Type: Article

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