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Volumn 73, Issue 17, 1998, Pages 2462-2464

Elimination of spectral shifts associated with tip-induced band bending in scanning tunneling spectroscopy of lightly doped silicon

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; LEAKAGE CURRENTS; LIGHTING; MOSFET DEVICES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SURFACES;

EID: 0032569526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122482     Document Type: Article
Times cited : (15)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.