Elimination of spectral shifts associated with tip-induced band bending in scanning tunneling spectroscopy of lightly doped silicon

Applied Physics Letters

Volumn 73, Issue 17, 1998, Pages 2462-2464

  Lin, Hai An ^a   Jaccodine, Ralph J ^a   Freund, Michael S ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; LEAKAGE CURRENTS; LIGHTING; MOSFET DEVICES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SURFACES;

CURRENT VOLTAGE CURVES; SPECTRAL SHIFTS; SURFACE PHOTOVOLTAGE EFFECT; TIP INDUCED BAND BENDING;

SEMICONDUCTING SILICON;

EID: 0032569526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122482     Document Type: Article

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