Tellurium depletion electrical effects in MoTe2-x single crystals doped with bromine

Journal of Materials Science

Volumn 32, Issue 9, 1997, Pages 2445-2449

  Morsli, M ^a   Bonnet, A ^a   Jousseaume, V ^a   Cattin, L ^a   Conan, A ^a   Zoaeter, M ^b  

^a UNIVERSITÉ DE NANTES   (France)

^b LEBANESE UNIVERSITY   (Lebanon)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BROMINE; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRONIC STRUCTURE; SINGLE CRYSTALS; STOICHIOMETRY; THERMAL EFFECTS; THERMOELECTRICITY;

THERMOELECTRIC POWER MEASUREMENT;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0031141264     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018569510512     Document Type: Article

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