Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

Applied Physics Letters

Volumn 106, Issue 10, 2015, Pages

  Guo, Yao ^a   Wei, Xianlong ^a   Shu, Jiapei ^a   Liu, Bo ^a   Yin, Jianbo ^b   Guan, Changrong ^a   Han, Yuxiang ^a   Gao, Song ^a   Chen, Qing ^a  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DIELECTRIC DEVICES; METALLIC COMPOUNDS; MOLYBDENUM COMPOUNDS; MOS DEVICES; MOSFET DEVICES; THRESHOLD VOLTAGE; TRANSISTORS;

COULOMB SCATTERING; FIELD EFFECT TRANSISTOR (FETS); LARGE HYSTERESIS; METAL OXIDE SEMICONDUCTOR; OXIDE-SEMICONDUCTOR INTERFACES; TRANSFER CURVES; TRAPPED CHARGE; VARIABLE RANGE HOPPING;

FIELD EFFECT TRANSISTORS;

EID: 84924914004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4914968     Document Type: Article

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