Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

Physical Review Letters

Volumn 90, Issue 5, 2003, Pages

  Lilly, M P ^a   Reno, J L ^a   Simmons, J A ^a   Spielman, I B ^b   Eisenstein, J P ^b   Pfeiffer, L N ^c   West, K W ^c   Hwang, E H ^d   Das Sarma, S ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE SCATTERING; DENSITY (SPECIFIC GRAVITY); ELECTRIC CONDUCTIVITY MEASUREMENT; FERMI LIQUIDS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; IMPURITIES; LOW TEMPERATURE EFFECTS; OHMIC CONTACTS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

DILUTE TWO DIMENSIONAL ELECTRON GAS; ELECTRON ELECTRON INTERACTIONS; GATED FIELD EFFECT TRANSISTOR;

ELECTRON GAS;

EID: 0037422982     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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