Controlled van der Waals epitaxy of monolayer MoS2 triangular domains on graphene

ACS Applied Materials and Interfaces

Volumn 7, Issue 9, 2015, Pages 5265-5273

  Ago, Hiroki ^a,b   Endo, Hiroko ^a   Solís Fernández, Pablo ^a   Takizawa, Rina ^a   Ohta, Yujiro ^a   Fujita, Yusuke ^a   Yamamoto, Kazuhiro ^a   Tsuji, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CVD; graphene; interface; MoS2; van der Waals epitaxy

Indexed keywords

GRAPHENE; INTERFACES (MATERIALS); LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; NANOCRYSTALLINE MATERIALS; OPTICAL PROPERTIES; PHOTONIC DEVICES; SILICA; VAN DER WAALS FORCES;

CHEMICAL VAPOR DEPOSITIONS (CVD); ELECTRONIC AND OPTICAL PROPERTIES; MOS2; PHOTOINDUCED CURRENTS; PHOTOLUMINESCENCE QUENCHING; TWO-DIMENSIONAL MATERIALS; VAN DER WAALS EPITAXY; VAN DER WAALS INTERACTIONS;

CHEMICAL VAPOR DEPOSITION;

EID: 84924567533     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am508569m     Document Type: Article

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