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Volumn 114, Issue 15, 2010, Pages 6894-6900

Tuning the fermi level of SiO2-supported single-layer graphene by thermal annealing

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRICAL CHARACTERIZATION; FIELD-EFFECT; GAS ATMOSPHERE; GRAPHENE DEVICES; HOLE ACCUMULATION; HOLE-DOPING; NEUTRALITY POINT; RAMAN FEATURE; SINGLE LAYER; THERMAL-ANNEALING;

EID: 77951100455     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp910085n     Document Type: Article
Times cited : (80)

References (64)
  • 2
    • 77951142077 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors
    • International Technology Roadmap for Semiconductors (http://www.itrs.net) .
  • 29
    • 42649126141 scopus 로고    scopus 로고
    • Electron and phonon properties of graphene: Their relationship with carbon nanotubes
    • Charlier, J. C.; Eklund, P. C.; Zhu, J.; Ferrari, A. C. Electron and phonon properties of graphene: Their relationship with carbon nanotubes Carbon Nanotubes 2008, 111, 673
    • (2008) Carbon Nanotubes , vol.111 , pp. 673
    • Charlier, J.C.1    Eklund, P.C.2    Zhu, J.3    Ferrari, A.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.