Direct chemical vapor deposition growth of WS2 atomic layers on hexagonal boron nitride

ACS Nano

Volumn 8, Issue 8, 2014, Pages 8273-8277

  Okada, Mitsuhiro ^a   Sawazaki, Takumi ^a   Watanabe, Kenji ^b   Taniguch, Takashi ^b   Hibino, Hiroki ^c   Shinohara, Hisanori ^a   Kitaura, Ryo ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

CVD growth; optical properties; transition metal dichalcogenides (TMDCs)

Indexed keywords

ATOMS; BORON NITRIDE; CRYSTALLINITY; ELECTRONIC STRUCTURE; III-V SEMICONDUCTORS; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SUBSTRATES; TRANSITION METALS; TUNGSTEN COMPOUNDS;

CHEMICAL VAPOR DEPOSITIONS (CVD); CRYSTALLOGRAPHIC ORIENTATIONS; CVD GROWTHS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); INTRINSIC PROPERTY; PHOTOLUMINESCENCE SPECTRUM; TRANSITION METAL DICHALCOGENIDES;

CHEMICAL VAPOR DEPOSITION;

EID: 84906674850     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503093k     Document Type: Article

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