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Volumn 5, Issue , 2014, Pages

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER; GRAPHENE; SILICON CARBIDE;

EID: 84910597364     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms5836     Document Type: Article
Times cited : (355)

References (30)
  • 1
    • 0021501461 scopus 로고
    • Fabrication and characterization of heterostructures with subnanometer thickness
    • Koma, A., Sunouchi, K. & Miyajima, T. Fabrication and characterization of heterostructures with subnanometer thickness. Microelectron. Eng. 2, 129-136 (1984).
    • (1984) Microelectron. Eng. , vol.2 , pp. 129-136
    • Koma, A.1    Sunouchi, K.2    Miyajima, T.3
  • 2
    • 84876733635 scopus 로고    scopus 로고
    • Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy
    • Utama, M. I. B. et al. Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy. Nanoscale 5, 3570-3588 (2013).
    • (2013) Nanoscale , vol.5 , pp. 3570-3588
    • Utama, M.I.B.1
  • 3
    • 84881167566 scopus 로고    scopus 로고
    • Van der Waals heterostructures
    • Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419-425 (2013).
    • (2013) Nature , vol.499 , pp. 419-425
    • Geim, A.K.1    Grigorieva, I.V.2
  • 4
    • 84876539655 scopus 로고    scopus 로고
    • Progress, challenges, and opportunities in two-dimensional materials beyond graphene
    • Butler, S. Z. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898-2926 (2013).
    • (2013) ACS Nano , vol.7 , pp. 2898-2926
    • Butler, S.Z.1
  • 5
    • 80052565002 scopus 로고    scopus 로고
    • Graphene: Show of adhesive strength
    • Huang, R. Graphene: show of adhesive strength. Nat. Nanotechnol. 6, 537-538 (2011).
    • (2011) Nat. Nanotechnol. , vol.6 , pp. 537-538
    • Huang, R.1
  • 6
    • 4243835303 scopus 로고
    • Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2 (0001)
    • Loher, T., Tomm, Y., Pettenkofer, C. & Jaegermann, W. Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2 (0001). Appl. Phys. Lett. 65, 555-557 (1994).
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 555-557
    • Loher, T.1    Tomm, Y.2    Pettenkofer, C.3    Jaegermann, W.4
  • 7
    • 0030288946 scopus 로고    scopus 로고
    • Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2
    • Loher, T. et al. Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2. J. Appl. Phys. 80, 5718-5722 (1996).
    • (1996) J. Appl. Phys. , vol.80 , pp. 5718-5722
    • Loher, T.1
  • 8
    • 84876266461 scopus 로고    scopus 로고
    • MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
    • Gupta, P. et al. MOVPE growth of semipolar III-nitride semiconductors on CVD graphene. J. Cryst. Growth 372, 105-108 (2013).
    • (2013) J. Cryst. Growth , vol.372 , pp. 105-108
    • Gupta, P.1
  • 9
    • 78049366766 scopus 로고    scopus 로고
    • Transferable GaN layers grown on ZnOcoated graphene layers for optoelectronic devices
    • Chung, K., Lee, C.-H. & Yi, G.-C. Transferable GaN layers grown on ZnOcoated graphene layers for optoelectronic devices. Science 330, 655-657 (2010).
    • (2010) Science , vol.330 , pp. 655-657
    • Chung, K.1    Lee, C.-H.2    Yi, G.-C.3
  • 10
    • 84859621828 scopus 로고    scopus 로고
    • Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
    • Kobayashi, Y., Kumakura, K., Akasaka, T. & Makimoto, T. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. Nature 484, 223-227 (2012).
    • (2011) Nature , vol.484 , pp. 223-227
    • Kobayashi, Y.1    Kumakura, K.2    Akasaka, T.3    Makimoto, T.4
  • 11
    • 84862294401 scopus 로고    scopus 로고
    • Van der Waals epitaxy of MoS2 layers using graphene as growth templates
    • Shi, Y. et al. Van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett. 12, 2784-2791 (2012).
    • (2011) Nano Lett. , vol.12 , pp. 2784-2791
    • Shi, Y.1
  • 12
    • 84870954237 scopus 로고    scopus 로고
    • High-quality GaN films grown on chemical vapor-deposited graphene films
    • Chung, K., Park, S. I., Baek, H., Chung, J.-S. & Yi, G.-C. High-quality GaN films grown on chemical vapor-deposited graphene films. NPG Asia Mater. 4, e24 (2012).
    • (2011) NPG Asia Mater. , vol.4 , pp. e24
    • Chung, K.1    Park, S.I.2    Baek, H.3    Chung, J.-S.4    Yi, G.-C.5
  • 13
    • 84874067578 scopus 로고    scopus 로고
    • Microstructural defects in GaN thin films grown on chemically vapor deposited graphene layers
    • Yoo, H., Chung, K., Park, S. I., Kim, M. & Yi, G.-C. Microstructural defects in GaN thin films grown on chemically vapor deposited graphene layers. Appl. Phys. Lett. 102, 051908 (2013).
    • (2013) Appl. Phys. Lett. , vol.102 , pp. 051908
    • Yoo, H.1    Chung, K.2    Park, S.I.3    Kim, M.4    Yi, G.-C.5
  • 14
    • 84880891095 scopus 로고    scopus 로고
    • Epitaxial growth of III-nitride/graphene heterostructures for electronic devices
    • Nepal, N. et al. Epitaxial growth of III-nitride/graphene heterostructures for electronic devices. App. Phys. Exp. 6, 061003 (2013).
    • (2013) App. Phys. Exp. , vol.6 , pp. 061003
    • Nepal, N.1
  • 15
    • 0037197433 scopus 로고    scopus 로고
    • Substrates for gallium nitride epitaxy
    • Liu, L. & Edgar, J. H. Substrates for gallium nitride epitaxy. Mater. Sci. Eng. R 37, 61-127 (2002).
    • (2002) Mater. Sci. Eng. R , vol.37 , pp. 61-127
    • Liu, L.1    Edgar, J.H.2
  • 16
    • 60749097071 scopus 로고    scopus 로고
    • Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
    • Emtsev, K. V. et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat. Mater. 8, 203-207 (2009).
    • (2009) Nat. Mater. , vol.8 , pp. 203-207
    • Emtsev, K.V.1
  • 17
    • 84859097467 scopus 로고    scopus 로고
    • Graphene: Synthesis and applications
    • Avouris, P. & Dimitrakopoulos, C. Graphene: synthesis and applications. Mater. Today 15, 86-97 (2012).
    • (2011) Mater. Today , vol.15 , pp. 86-97
    • Avouris, P.1    Dimitrakopoulos, C.2
  • 18
    • 84865187924 scopus 로고    scopus 로고
    • Kerf-less removal of Si, Ge, and III-V layers by controlled spalling to enable low-cost PV technologies
    • Bedell, S. W. et al. Kerf-less removal of Si, Ge, and III-V layers by controlled spalling to enable low-cost PV technologies. IEEE J. Photovoltaics 2, 141-147 (2012).
    • (2011) IEEE J. Photovoltaics , vol.2 , pp. 141-147
    • Bedell, S.W.1
  • 19
    • 84887826351 scopus 로고    scopus 로고
    • Layer-resolved graphene transfer via engineered strain layers
    • Kim, J. et al. Layer-resolved graphene transfer via engineered strain layers. Science 342, 833-836 (2013).
    • (2013) Science , vol.342 , pp. 833-836
    • Kim, J.1
  • 20
    • 0038003957 scopus 로고    scopus 로고
    • Microstructure of heteroepitaxial GaN revealed by X-ray diffraction
    • Chierchia, R. et al. Microstructure of heteroepitaxial GaN revealed by X-ray diffraction. J. Appl. Phys. 93, 8918-8925 (2003).
    • (2003) J. Appl. Phys. , vol.93 , pp. 8918-8925
    • Chierchia, R.1
  • 21
    • 63749112930 scopus 로고    scopus 로고
    • Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers
    • Tasco, V. et al. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers. J. Appl. Phys. 105, 063510 (2009).
    • (2009) J. Appl. Phys. , vol.105 , pp. 063510
    • Tasco, V.1
  • 22
    • 27144478903 scopus 로고    scopus 로고
    • Persistent step-flow growth of strained films on vicinal substrates
    • Hong, W. et al. Persistent step-flow growth of strained films on vicinal substrates. Phys. Rev. Lett. 95, 095501 (2005).
    • (2005) Phys. Rev. Lett. , vol.95 , pp. 095501
    • Hong, W.1
  • 23
    • 0009586444 scopus 로고
    • Step-flow growth on strained surfaces
    • Ratsch, C. & Zangwill, A. Step-flow growth on strained surfaces. Appl. Phys. Lett. 63, 2348-2350 (1993).
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2348-2350
    • Ratsch, C.1    Zangwill, A.2
  • 24
    • 0032477148 scopus 로고    scopus 로고
    • Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
    • Marchand, H. et al. Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition. J. Cryst. Growth 195, 328-332 (1998).
    • (1998) J. Cryst. Growth , vol.195 , pp. 328-332
    • Marchand, H.1
  • 25
    • 76249125849 scopus 로고    scopus 로고
    • Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates
    • Reitmeier, Z. J. et al. Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates. Acta Mater. 58, 2165-2175 (2010).
    • (2010) Acta Mater. , vol.58 , pp. 2165-2175
    • Reitmeier, Z.J.1
  • 27
    • 75749106310 scopus 로고    scopus 로고
    • AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
    • Bayram, C., Vashaei, Z. & Razeghi, M. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition. Appl. Phys. Lett. 96, 042103 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 042103
    • Bayram, C.1    Vashaei, Z.2    Razeghi, M.3
  • 29
    • 0038007853 scopus 로고    scopus 로고
    • Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer
    • Ueda, T., Ishida, M. & Yuri, M. Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer. Appl. Surf. Sci. 216, 512-518 (2003).
    • (2003) Appl. Surf. Sci. , vol.216 , pp. 512-518
    • Ueda, T.1    Ishida, M.2    Yuri, M.3
  • 30
    • 2342513370 scopus 로고    scopus 로고
    • Study of GaN light-emitting diodes fabricated by laser lift-off technique
    • Chu, C.-F. et al. Study of GaN light-emitting diodes fabricated by laser lift-off technique. J. Appl. Phys. 95, 3916-3922 (2004).
    • (2004) J. Appl. Phys. , vol.95 , pp. 3916-3922
    • Chu, C.-F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.