Formation and nature of InGaN quantum dots in GaN nanowires

Nano Letters

Volumn 15, Issue 3, 2015, Pages 1647-1653

  Deshpande, Saniya ^a   Frost, Thomas ^a   Yan, Lifan ^a   Jahangir, Shafat ^a   Hazari, Arnab ^a   Liu, Xianhe ^b   Mirecki Millunchick, Joanna ^a   Mi, Zetian ^b   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b MCGILL UNIVERSITY   (Canada)

Author keywords

GaN nanowire; Molecular beam epitaxy; nanowire laser; quantum disk in nanowire; quantum dots; single photon emission

Indexed keywords

GALLIUM NITRIDE; LIGHT SOURCES; MOLECULAR BEAM EPITAXY; NANOCRYSTALS; NANOWIRES; PARTICLE BEAMS; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

EDGE EMITTING LASERS; GAN NANOWIRES; INGAN QUANTUM DOTS; LINEWIDTH-ENHANCEMENT FACTOR; MEASURED TEMPERATURES; NANOWIRE HETEROSTRUCTURES; QUANTUM DISKS; SINGLE PHOTON EMISSION;

QUANTUM DOT LASERS;

EID: 84924548080     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5041989     Document Type: Article

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