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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Deep level optical spectroscopy of GaN nanorods

(6) Armstrong, A a Li, Q a Bogart, K H A a Lin, Y a Wang, G T a Talin, A A b

a SANDIA NATIONAL LABORATORIES (United States)

b SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP STATE; CONDUCTION-BAND MINIMUM; COORDINATE MODELS; DEEP LEVEL OPTICAL SPECTROSCOPY; DEEP-LEVEL DEFECTS; DEEP-LEVEL SPECTROSCOPY; DEFECT BANDS; DEFECT CENTERS; GAN NANORODS; IONIZATION ENERGIES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICROPHOTOLUMINESCENCE; MINORITY CARRIER; NONRADIATIVE DEFECTS; PL SPECTRA;

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANORODS; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM;

DEFECTS;

EID: 70349315459 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3211317 Document Type: Article

Times cited : (40)

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