Intrinsic performance variability in aligned array CNFETs

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 439-444

  Salamat, Shuaib ^a   Ho, Xinning ^b   Rogers, John A ^b   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Aligned network transistor; carbon nanotube (CNT) FET (CNFET); diameter distribution; thin film transistor (TFT)

Indexed keywords

ALIGNED ARRAYS; ARRAY TRANSISTORS; CONTACT MATERIAL; DEVICE RESISTANCE; DIAMETER DISTRIBUTION; DIAMETER DISTRIBUTIONS; INTRINSIC PERFORMANCE; IV CHARACTERISTICS; LARGE SCALE INTEGRATION; NETWORK TRANSISTORS; NUMERICAL SIMULATION; ON CURRENTS; SCHOTTKY BARRIERS; THIN-FILM TRANSISTOR (TFT);

CARBON NANOTUBES; MESFET DEVICES; SCHOTTKY BARRIER DIODES; THIN FILM TRANSISTORS;

TRANSISTORS;

EID: 79955908793     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2046674     Document Type: Article

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