High-performance air-stable n-type carbon nanotube transistors with erbium contacts

ACS Nano

Volumn 7, Issue 9, 2013, Pages 8303-8308

  Shahrjerdi, Davood ^a   Franklin, Aaron D ^a   Oida, Satoshi ^a   Ott, John A ^a   Tulevski, George S ^a   Haensch, Wilfried ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

carbon nanotube; device yield; low work function metals; n type transistors

Indexed keywords

CARBON NANOTUBE TRANSISTORS; DEPOSITION CONDITIONS; DEVICE YIELD; DIGITAL APPLICATIONS; HIGH DEPOSITION RATES; LOW WORK FUNCTION; OXIDATION RATES; PALLADIUM CONTACTS;

CARBON NANOTUBES; DEPOSITION; ERBIUM; METALS; SENSITIVITY ANALYSIS; WORK FUNCTION;

TRANSISTORS;

EID: 84884950508     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403935v     Document Type: Article

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