Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Akinwande, Deji ^a   Liang, Jiale ^a   Chong, Soogine ^a   Nishi, Yoshio ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CARBON NANOTUBES; ENERGY GAP; EXPERIMENTS; NANOCOMPOSITES; NANOTUBES; PARAMETER EXTRACTION; SURFACE POTENTIAL; SURFACE PROPERTIES; TRANSISTORS;

ANALYTICAL THEORIES; AND GATES; BALLISTIC TRANSISTORS; BANDGAP; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARBON NANOTUBE TRANSISTORS; CIRCUIT DESIGNS; DEVICE PHYSICS; EXPERIMENTAL VALIDATIONS; LINEAR CONDUCTANCES; OPTICAL PHONON SCATTERINGS; QUANTUM CAPACITANCES; TEMPERATURE DEPENDENCES;

FIELD EFFECT TRANSISTORS;

EID: 58149269497     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050345     Document Type: Article

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