Optimization of fluorine plasma treatment for interface improvement on HfO2/In0.53Ga0.47As MOSFETs

Applied Sciences (Switzerland)

Volumn 2, Issue 1, 2012, Pages 233-244

  Chen, Yen Ting ^a   Wang, Yanzhen ^a   Xue, Fei ^a   Zhou, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Fluorine plasma treatment; HfO2; High k dielectrics; InGaAs

Indexed keywords

EID: 84921469057     PISSN: None     EISSN: 20763417     Source Type: Journal    
DOI: 10.3390/app2010233     Document Type: Article

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