Nitric acid oxidation of Si method for improvement of crystalline Si solar cell characteristics by surface passivation effect

Solar Energy Materials and Solar Cells

Volumn 134, Issue , 2015, Pages 298-304

  Matsumoto, Taketoshi ^a   Hirose, Ryo ^a   Shibata, Fumio ^b   Ishibashi, Daisuke ^b   Ogawara, Shoji ^b   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b CANON INC   (Japan)

Author keywords

NAOS; Nitric acid; Passivation; Silicon; Silicon nitride; Solar cell

Indexed keywords

CARRIER LIFETIME; CRYSTALLINE MATERIALS; INTERFACE STATES; NITRIC ACID; NITRIDES; PASSIVATION; PLASMA APPLICATIONS; SILICON NITRIDE; SILICON OXIDES; SILICON SOLAR CELLS; SOLAR CELLS;

CRYSTALLINE SI SOLAR CELLS; MINORITY CARRIER LIFETIMES; NAOS; NITRIC ACID OXIDATION; SILICON NITRIDE (SIN); SURFACE CHEMICAL STRUCTURES; SURFACE PASSIVATION EFFECTS; ULTRATHIN SILICON DIOXIDE;

SILICON;

EID: 84921403299     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.11.040     Document Type: Article

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