Methods of observation and elimination of semiconductor defect states

Solar Energy

Volumn 80, Issue 6, 2006, Pages 645-652

  Kobayashi, Hikaru ^a   Liu, Yueh Ling ^a   Yamashita, Yoshiyuki ^a   Ivánčo, Jan ^a   Imai, Shigeki ^b   Takahashi, Masao ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

Bias; Cyanide treatment; Defect passivation; Silicon; Solar cells; XPS

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); SILICA; SINGLE CRYSTALS; SOLAR CELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC DENSITY; CYANIDE TREATMENT; DEFECT PASSIVATION; PHOTOVOLTAGE;

SEMICONDUCTOR MATERIALS;

CRYSTAL DEFECTS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS; SILICA; SINGLE CRYSTALS; SOLAR CELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

CYANIDE; METAL; OXYGEN; SILICON; X-RAY SPECTROSCOPY;

EID: 33646863666     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2005.12.001     Document Type: Article

References (31)

1. 2/Si interfaces on the oxide atomic density determined from FTIR measurements. Surf. Sci. 427-428 (1999) 219-223
2. Asano A., Asuha, Maida O., Todokoro Y., and Kobayashi H. Decrease in the leakage current density of Si-based metal-oxide-semiconductor diodes by cyanide treatment. Appl. Phys. Lett. 80 (2002) 4552-4554
3. Berglund C.N. Surface states at steam-grown silicon-silicon dioxide interfaces. IEEE Trans. Electron Dev. ED-13 (1966) 701-705
4. Caplan P.J., Poindexter E.H., Deal B.E., and Razouk R.R. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers. J. Appl. Phys. 50 (1979) 5847-5854
5. Kanazaki E., Yoneda K., Todokoro Y., Nishitani M., and Kobayashi H. Passivation of trap states in polycrystalline Si by cyanide treatments. Solid State Commun. 113 (2000) 195-199
6. 2/Si interfaces by crown-ether cyanide treatment. Appl. Phys. Lett. 77 (2000) 4392-4394
7. Kobayashi H., Kogetsu Y., Ishida T., and Nakato Y. Increases in photovoltage of 〈indium tin oxide/silicon oxide/mat-textured n-silicon〉 junction solar cells by silicon preoxidation and annealing processes. J. Appl. Phys. 74 (1993) 4756-4761
8. Kobayashi H., Mori T., Namba K., and Nakato Y. New method for determination of energy distribution of surface states in the semiconductor band-gap: XPS measurements under biases. Solid State Commun. 92 (1994) 249-254
9. Kobayashi H., Namba K., Mori T., and Nakato Y. Energy distribution of interface states in the band gap of GaAs determined from X-ray photoelectron spectra under biases. Phys. Rev. B 52 (1995) 5781-5788
10. 2/6H-SiC(0 0 0 1) interfaces observed by X-ray photoelectron spectroscopy measurements under bias: Comparison between dry and wet oxidation. Phys. Rev. B 67 (2003) 115305-1-115305-8
11. Kobayashi H., Yamashita Y., Nakato Y., Komeda T., and Nishioka Y. Interface states at ultrathin oxide/Si(1 1 1) interfaces obtained from X-ray photoelectron spectroscopy measurements under biases. Appl. Phys. Lett. 69 (1996) 2276-2278
12. Kubota T., Asano A., Nishioka Y., and Kobayashi H. Theoretical and spectroscopic studies of gap-states at ultrathin silicon oxide/silicon interfaces. J. Chem. Phys. 111 (1999) 8136-8143
13. Kubota T., Ivánčo J., Takahashi M., Yoneda K., Todokoro Y., and Kobayashi H. Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias. Surf. Sci. 529 (2003) 329-337
14. 2. Phys. Status Solidi B 117 (1983) 689-698
15. 2 interface. Surf. Sci. 542 (2003) 244-252
16. 2 films. J. Appl. Phys. 77 (1995) 4343-4348
17. 2 MOS structures. IEEE Trans. Nucl. Sci. NS-27 (1980) 1651-1657
18. 2 on Si: An ion-beam study. J. Appl. Phys. 61 (1987) 5428-5437
19. 2 interface-Electrical properties as determined by metal-insulator-silicon conductance technique. Bell Syst. Tech. J. 46 (1967) 1055-1967
20. Nissan-Cohen Y. The effect of hydrogen on hot carrier radiation immunity of MOS devices. Appl. Surf. Sci. 39 (1989) 511-522
21. 2O thin films by crown-ether cyanide treatment. Appl. Phys. Lett. 82 (2003) 1060-1062
22. 2 interface defects by electron spin resonance. Prog. Surf. Sci. 14 (1983) 201-294
23. 2 interface trap annealing. J. Appl. Phys. 63 (1988) 5776-5793
24. Runyan W.R. Semiconductor Measurements and Instrumentation (1975), McGraw-Hill, New York
25. Sakoda T., Matsumura M., and Nishioka Y. Effects of post-oxidation annealing on 3 nm-thick low-temperature-grown gate oxide. Appl. Surf. Sci. 117/118 (1997) 241-244
26. 2 interface states observed by X-ray photoelectron spectroscopy measurements under bias. Appl. Phys. Lett. 78 (2001) 96-98
27. 2 interface. Phys. Rev. Lett. 72 (1994) 2745-2748
28. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Wiley, New York
29. Terman L.M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid-State Electron. 5 (1962) 285-299
30. Yamashita Y., Namba K., Nakato Y., Nishioka Y., and Kobayashi H. Spectroscopic observation of interface states of ultrathin silicon oxide. J. Appl. Phys. 79 (1996) 7051-7057
31. Yamashita Y., Asano A., Nishioka Y., and Kobayashi H. Dependence of interface states in the Si band gap on oxide atomic density and interfacial roughness. Phys. Rev. B 59 (1999) 15872-15881