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Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 260-265

Surface modification of silicon related materials using a catalytic CVD system for ULSI applications

(1) Izumi, Akira a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

Catalytic CVD; Nitridation; Oxidation; Surface modification

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; ELECTRIC PROPERTIES; PERMITTIVITY; SILICA; SURFACE TREATMENT; THERMOOXIDATION; ULSI CIRCUITS; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE NITRIDATION;

SEMICONDUCTING SILICON;

EID: 0035800990 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01268-8 Document Type: Conference Paper

Times cited : (19)

References (29)

1
- 0005823923
- G. Eric, G. Evgeni, V. Alexander (Eds.), Kluwer Academic Press, The Netherlands
- (1998) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices , pp. 1
- Feldman, L.C.¹ Gusev, E.P.² Garfunkel, E.³

2
- 0004245602
- (1999) International Technology Roadmap for Semiconductors , pp. 124

3
- 0032683840
- (1999) IBM J. Res. Dev. , vol.43 , pp. 265
- Gusev, E.P.¹ Lu, H.-C.² Garfunkel, E.L.³ Gustafsson, T.⁴ Green, M.L.⁵

4
- 0031548129
- (1997) Appl. Surf. Sci. , vol.117-118 , pp. 123
- Fuyuki, T.¹ Murakawa, S.² Matsunami, H.³

5
- 0000921804
- (1991) Appl. Phys. Lett. , vol.11 , pp. 619
- Bright, A.A.¹ Batey, J.² Tierny, E.³

6
- 0002373320
- (2000) Jpn. J. Appl. Phys. , vol.39
- Ueno, T.¹ Morioka, A.² Chikamura, S.³ Iwasaki, Y.⁴

7
- 0033307577
- Washington DC
- (1999) Technical Digest of International Electron Devices Meeting , pp. 249
- Hirayama, M.¹ Sekine, K.² Saito, Y.³ Ohmi, T.⁴

8
- 0032267114
- San Francisco
- (1998) Technical Digest of International Electron Devices Meeting , pp. 593
- Nagamine, N.¹ Itoh, H.² Satake, H.³ Toriumi, A.⁴

9
- 0028462506
- (1994) Jpn. J. Appl. Phys. , vol.33
- Nakamura, K.¹ Ichimura, S.² Shimizu, H.³

10
- 36449005178
- (1995) Appl. Phys. Lett. , vol.66 , pp. 3495
- Hattangady, S.V.¹ Niimi, H.² Lucovsky, G.³

11
- 17144472513
- (1998) Appl. Surf. Sci. , vol.130-132 , pp. 187
- Saito, Y.¹ Iguchi, S.²

12
- 0000627157
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 418
- Saito, Y.¹ Sekine, K.² Hirayama, M.³ Ohmi, T.⁴

13
- 0031273951
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 7035
- Okada, S.¹ Matsumura, H.²

14
- 0023033656
- (1986) Jpn. J. Appl. Phys. , vol.25
- Matsumura, H.¹

15
- 0026206563
- (1991) Jpn. J. Appl. Phys. , vol.30
- Matsumura, H.¹

16
- 0001362728
- Chapter 3
- (1997) Inst. Phys. Conf. Ser. No 155 , pp. 343
- Izumi, A.¹ Masuda, A.² Okada, S.³ Matsumura, H.⁴

17
- 0032650706
- (1999) Thin Solid Films , vol.343-344 , pp. 528
- Izumi, A.¹ Masuda, A.² Matsumura, H.³

18
- 0033726819
- (1999) Microelectronic Eng. , vol.51-52 , pp. 495
- Izumi, A.¹ Sato, H.² Hashioka, S.³ Kudo, M.⁴ Matsumura, H.⁵

19
- 0003175789
- NN2.6, Boston, December
- (1999) Materials Research Society Symposium 1999 Fall Meeting , pp. 690
- Sato, H.¹ Izumi, A.² Matsumura, H.³

20
- 0001579066
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2752
- Sato, H.¹ Izumi, A.² Matsumura, H.³

21
- 0001125632
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1371
- Izumi, A.¹ Matsumura, H.²

22
- 0032652671
- (1999) Electrochem. Solid-State Lett. , vol.2 , pp. 388
- Izumi, A.¹ Sohara, S.² Kudo, M.³ Matsumura, H.⁴

23
- 0030233543
- (1996) Appl. Surf. Sci. , vol.104-105 , pp. 359
- Nohira, H.¹ Sekikawa, H.² Matsuda, M.³ Hattori, T.⁴

24
- 0021177532
- (1984) Appl. Phys. Lett. , vol.44 , pp. 93
- Hollinger, G.¹ Himpsel, F.J.²

25
- 0001188528
- (1962) Solid State Electron. , vol.5 , pp. 285
- Terman, L.M.¹

26
- 0018812038
- (1981) Appl. Surf. Sci. , vol.7 , pp. 168
- Taylor, J.A.¹

27
- 0001505814
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2116
- Arendt, M.¹ White, J.M.²

28
- 0025484483
- (1990) IEEE Trans. Electron Devices , vol.37 , pp. 2058
- Hori, T.¹

29
- 22244480327
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2094
- Wristers, D.¹ Han, L.K.² Chen, T.³ Wang, H.H.⁴ Kwong, D.L.⁵

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