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Volumn 356, Issue 50-51, 2010, Pages 2880-2883

Optimized surface passivation of n and p type silicon wafers using hydrogenated SiNx layers

Author keywords

Fixed charge; PECVD; Silicon nitride films; Surface passivation

Indexed keywords

FILM COMPOSITION; FIXED CHARGE DENSITY; FIXED CHARGES; HYDROGEN BONDINGS; KEYPOINTS; MINORITY CARRIER LIFETIMES; P-TYPE; P-TYPE SILICON WAFERS; PECVD; POSITIVE CHARGES; SI-H BONDS; SILICON NITRIDE FILMS; SURFACE PASSIVATION;

EID: 78449257249     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.09.025     Document Type: Article
Times cited : (8)

References (13)
  • 5
    • 78449232558 scopus 로고    scopus 로고
    • Ph.D. Thesis, University of Hannover
    • Stefan Dauwe, Ph.D. Thesis, University of Hannover, 2004.
    • (2004)
    • Dauwe, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.