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Volumn 356, Issue 50-51, 2010, Pages 2880-2883
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Optimized surface passivation of n and p type silicon wafers using hydrogenated SiNx layers
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Author keywords
Fixed charge; PECVD; Silicon nitride films; Surface passivation
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Indexed keywords
FILM COMPOSITION;
FIXED CHARGE DENSITY;
FIXED CHARGES;
HYDROGEN BONDINGS;
KEYPOINTS;
MINORITY CARRIER LIFETIMES;
P-TYPE;
P-TYPE SILICON WAFERS;
PECVD;
POSITIVE CHARGES;
SI-H BONDS;
SILICON NITRIDE FILMS;
SURFACE PASSIVATION;
CARRIER LIFETIME;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
FOURIER TRANSFORMS;
HYDROGEN;
HYDROGEN BONDS;
HYDROGENATION;
PASSIVATION;
REFRACTIVE INDEX;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON NITRIDE;
WAFER BONDING;
SILICON WAFERS;
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EID: 78449257249
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2010.09.025 Document Type: Article |
Times cited : (8)
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References (13)
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