SCOPUS 정보 검색 플랫폼

International Materials Reviews

Volumn 60, Issue 3, 2015, Pages 133-149

Electronic functionalisation of graphene via external doping and dosing

(2) Bangert, Ursel a Zan, Recep b

a UNIVERSITY OF LIMERICK (Ireland)

b NIGDE UNIVERSITY (Turkey)

Author keywords

(S)TEM; Adatoms; Doping; EELS; Graphene; Lattice site impurities; Metal contacting; STM

Indexed keywords

ADATOMS; ATOMS; DEFECTS; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; ETCHING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTELLIGENT AGENTS; METALS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; TOPOGRAPHY; TRANSMISSIONS;

ATOMIC-SCALE INTERACTION; BAND GAP ENGINEERING; ELECTRICAL CONTACTS; INTERACTION PHENOMENA; LATTICE SITES; METAL INTERACTIONS; MOLECULAR SELF ASSEMBLY; SPATIALLY RESOLVED;

GRAPHENE;

EID: 84920425454 PISSN: 09506608 EISSN: 17432804 Source Type: Journal
DOI: 10.1179/1743280414Y.0000000047 Document Type: Review

Times cited : (11)

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