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Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

Controlling the electrical transport properties of graphene by in situ metal deposition

(6) Ren, Yujie a,b Chen, Shanshan b,c Cai, Weiwei b,c Zhu, Yanwu b Zhu, Chaofu a Ruoff, Rodney S b

a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

b The University of Texas at Austin (United States)

c XIAMEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC POINT; ELECTRICAL TRANSPORT PROPERTIES; HIGH VACUUM; IN-SITU; METAL DEPOSITION;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FERMI LEVEL; FIELD EFFECT TRANSISTORS; GOLD DEPOSITS; GRAPHENE; MESFET DEVICES; METALS; SILVER; TRANSPORT PROPERTIES;

GOLD COATINGS;

EID: 77955737752 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3471396 Document Type: Article

Times cited : (73)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.