Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

Journal of Applied Physics

Volumn 116, Issue 24, 2014, Pages

  Richter, Armin ^a   Benick, Jan ^a   Kimmerle, Achim ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DEFECT DENSITY; PASSIVATION; PHOSPHORUS; SILICON; SILICON NITRIDE; SURFACE DEFECTS; TEMPERATURE;

DEVICE SIMULATIONS; DIFFUSION PROFILES; HIGH TEMPERATURE TREATMENTS; HIGH-TEMPERATURE FIRING; INTERFACE PROPERTY; NEGATIVE FIXED CHARGE; SURFACE RECOMBINATIONS; THERMAL ACTIVATION;

ALUMINUM;

EID: 84919754421     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4903988     Document Type: Article

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