Modelling carrier recombination in highly phosphorus-doped industrial emitters

Energy Procedia

Volumn 8, Issue , 2011, Pages 275-281

  Kimmerle, A ^a   Wolf, A ^a   Belledin, U ^a   Biro, D ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Dead layer; Emitter; Lifetime; Modelling; Passivation; Recombination

Indexed keywords

CARRIER LIFETIME; DOPING (ADDITIVES); ENERGY GAP; MODELS; PASSIVATION; PHOSPHORUS; SILICON NITRIDE;

CARRIER RECOMBINATION; DEAD LAYERS; EMITTER; FERMI-DIRAC STATISTICS; LIFETIME; RECOMBINATION; SATURATION CURRENT DENSITIES; SURFACE RECOMBINATION VELOCITIES;

CARRIER CONCENTRATION;

EID: 80052086502     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.136     Document Type: Conference Paper

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