Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNxfor c-Si surface passivation

Applied Physics Letters

Volumn 105, Issue 23, 2014, Pages

  Schuldis, D ^a   Richter, A ^a   Benick, J ^a   Saint Cast, P ^a   Hermle, M ^a   Glunz, S W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DEFECT DENSITY; DEPOSITION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; VAPOR DEPOSITION;

ATOMIC LAYER DEPOSITED; FIXED CHARGE DENSITY; HIGH EFFICIENCY SILICON SOLAR CELLS; POST DEPOSITION TREATMENT; SHOCKLEY-READ-HALL MODELS; SURFACE PASSIVATION; SURFACE RECOMBINATIONS; THEORETICAL CALCULATIONS;

ATOMIC LAYER DEPOSITION;

EID: 84915820639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4903483     Document Type: Article

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