Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μ m long-wavelength cutoff

Applied Physics Letters

Volumn 105, Issue 22, 2014, Pages

  Conley, Benjamin R ^a   Margetis, Joe ^b   Du, Wei ^a   Tran, Huong ^a   Mosleh, Aboozar ^a   Ghetmiri, Seyed Amir ^a   Tolle, John ^b   Sun, Greg ^c   Soref, Richard ^c   Li, Baohua ^d   Naseem, Hameed A ^a   Yu, Shui Qing ^a  

^a University of Arkansas   (United States)

^b ASM   (United States)

^c UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^d Arktonics LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; DEPOSITION; GERMANIUM; PHOTOCONDUCTIVITY; THIN FILMS; VAPOR DEPOSITION;

CMOS COMPATIBLE; EFFECTIVE CARRIER LIFETIMES; PEAK RESPONSIVITY; PHOTOCONDUCTIVE GAINS; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SPECIFIC DETECTIVITY; SPECTRAL RESPONSE; TEMPERATURE DEPENDENT;

TIN;

EID: 84916608364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4903540     Document Type: Article

References (24)

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