Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy

Optics Express

Volumn 22, Issue 9, 2014, Pages 11029-11034

  Kim, Sangcheol ^a   Bhargava, Nupur ^a   Gupta, Jay ^a   Coppinger, Matthew ^a   Kolodzey, James ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; TIN;

BIAS DEPENDENCE; DEVICE RESPONSE; HETEROJUNCTION DEVICES; IR WAVELENGTHS; PHOTOCURRENT RESPONSE; PHOTOCURRENT SPECTRUM; PHOTORESPONSES; SOLID SOURCE MOLECULAR BEAM EPITAXY;

HETEROJUNCTIONS;

EID: 84899842205     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.011029     Document Type: Article

References (15)

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