GeSn/Ge multiquantum well photodetectors on Si substrates

Optics Letters

Volumn 39, Issue 16, 2014, Pages 4711-4714

  Oehme, M ^a   Widmann, D ^a   Kostecki, K ^a   Zaumseil, P ^b   Schwartz, B ^c   Gollhofer, M ^a   Koerner, R ^a   Bechler, S ^a   Kittler, M ^b,c   Kasper, E ^a   Schulze, J ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b IHP   (Germany)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTONS; TEMPERATURE;

ABSORPTION EDGES; EPITAXIAL STRUCTURE; IN-PLANE LATTICES; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; MULTIQUANTUM WELLS; P-I-N PHOTODETECTORS; QUANTIZATION ENERGY; VIRTUAL SUBSTRATES;

SUBSTRATES;

EID: 84906088018     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.39.004711     Document Type: Article

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