Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process

Applied Physics Letters

Volumn 102, Issue 13, 2013, Pages

  Seguini, G ^a   Cianci, E ^a   Wiemer, C ^a   Saynova, D ^b   Van Roosmalen, J A M ^b   Perego, M ^a  

^a LABORATORIO MDM   (Italy)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE TECHNIQUES; EFFECTIVE CARRIER LIFETIMES; FIELD EFFECT PASSIVATION; LOW PROCESSING TEMPERATURE; LOW THERMAL BUDGET; PASSIVATION PROPERTIES; POST DEPOSITION ANNEALING; SURFACE PASSIVATION;

ATOMIC LAYER DEPOSITION; PASSIVATION; SILICON; TEMPERATURE;

DEPOSITION;

EID: 84876121481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4800541     Document Type: Article

References (26)

1. J. Schmidt, A. Merkle, R. Brendel, B. Hoex, M. C. M. van de Sanden, and W. M. M. Kessels, Prog. Photovoltaics 16, 461 (2008). 10.1002/pip.823
2. S. Gatz, H. Hannebauer, R. Hesse, F. Werner, A. Schmidt, T. Dullweber, J. Schmidt, K. Bothe, and R. Brendel, Phys. Status Solidi (RRL) 5, 147 (2011). 10.1002/pssr.201105045
3. J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz, and S. W. Glunz, Appl. Phys. Lett. 92, 253504 (2008). 10.1063/1.2945287
4. R. Bock, S. Mau, J. Schmidt, and R. Brendel, Appl. Phys. Lett. 96, 263507 (2010). 10.1063/1.3456536
5. B. Hoex, J. Schmidt, P. Pohl, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 104, 044903 (2008). 10.1063/1.2963707
6. N. M. Terlinden, G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 96, 112101 (2010). 10.1063/1.3334729
7. G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid-State Lett. 13 (3), H76-H79 (2010). 10.1149/1.3276040
8. G. Dingemans, N. M. Terlinden, D. Pierreux, H. B. Profijt, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid-State Lett. 14 (1), H1-H4 (2011). 10.1149/1.3501970
9. D. Zielke, J. H. Petermann, F. Werner, B. Veith, R. Brendel, and J. Schmidt, Phys. Status Solidi (RRL) 5, 298 (2011). 10.1002/pssr.201105285
10. F. Werner, B. Veith, D. Zielke, L. Kühnemund, C. Tegenkamp, M. Seibt, R. Brendel, and J. Schmidt, J. Appl. Phys. 109, 113701 (2011). 10.1063/1.3587227
11. B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 104, 113703 (2008). 10.1063/1.3021091
12. G. Dingemans, R. Seguin, P. Engelhart, M. C. M. van de Sanden, and M. M. Kessels, Phys. Status Solidi (RRL) 4, 10 (2010). 10.1002/pssr.200903334
13. J. Frascaroli, G. Seguini, E. Cianci, D. Saynova, J. van Roosmalen, and M. Perego, Phys. Status Solidi A, 210, 732 (2013).
14. T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama, Sol. Energy Mater. Sol. Cells 95, 18 (2011). 10.1016/j.solmat.2010.04.030
15. Q. Wang, Philos. Mag. 89, 2587 (2009). 10.1080/14786430902919489
16. W. van Sark, L. Korte, and F. Roca, Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells (Springer, 2012).
17. R. A. Sinton and A. Cuevas, Appl. Phys. Lett. 69, 2510 (1996). 10.1063/1.117723
18. E. H. Nicollian and J. R. Brews, Metal Oxide Semiconductor Physics and Technology (Wiley, New York, 1982).
19. J. J. H. Gielis, B. Hoex, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 104, 073701 (2008). 10.1063/1.2985906
20. L. Lamagna, G. Scarel, and M. Fanciulli, J. Vac. Sci. Technol. A 27, 443 (2009). 10.1116/1.3097849
21. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (John Wiley Sons, Inc., 2006).
22. J. M. Rafì, M. Zabala, O. Beldarrain, and F. Campabadal, J. Electrochem Soc. 158, G108 (2011). 10.1149/1.3559458
23. M. K. Matsunaga, T. Tanaka, T. Yamamoto, and Y. Ikuhara, Phys. Rev. B 68, 085110 (2003). 10.1103/PhysRevB.68.085110
24. R. Weber, A. Janotti, and C. G. van de Walle, J. Appl. Phys. 109, 033715 (2011). 10.1063/1.3544310
25. G. Dingemans, N. M. Terlinden, M. A. Verheijen, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 110, 093715 (2011). 10.1063/1.3658246
26. K. Kimoto, Y. Matsui, T. Nabatame, T. Yasuda, T. Mizoguchi, I. Tanaka, and A. Toriumi, Appl. Phys. Lett. 83, 4306 (2003). 10.1063/1.1629397